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Charge States of Heavy Ions with Energy in the MeV Range in Crystalline Semiconductor Targets
Published online by Cambridge University Press: 25 February 2011
Abstract
In this work a formalism for the evaluation of electronic losses of heavy ions with energy of few MeV in crystalline semiconductor targets is presented. The stopping values are used in a Monte Carlo simulation to calculate the ion range in silicon and in gallium arsenide for a random orientation of the target and under channelling conditions.
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- Copyright © Materials Research Society 1990