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Characterizaton of Pecvd Fluorinated Silicon Oxides and Stabilization of Interaction with Metals

Published online by Cambridge University Press:  10 February 2011

Sarah E. Kim ,
Christoph Steinbruichel ,
Atul Kumar  and
H. Bakhru
Sarah E. Kim
Affiliation:
Rensselaer Polytechnic Institute, Department of Materials Engineering and Center for Integrated Electronics and Electronic Manufacturing, Troy, NY, 12180
Christoph Steinbruichel
Affiliation:
Rensselaer Polytechnic Institute, Department of Materials Engineering and Center for Integrated Electronics and Electronic Manufacturing, Troy, NY, 12180
Atul Kumar
Affiliation:
SUNY at Albany, Department of Physics, Albany, NY, 12222
H. Bakhru
Affiliation:
SUNY at Albany, Department of Physics, Albany, NY, 12222
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Abstract

Fluorinated silicon oxide films were prepared in a plasma enhanced chemical vapor deposition reactor using TEOS, O2, and either C2F6 or NF3. Properties such as deposition rate, film refractive index, dielectric constant, density, and fluorine concentration were investigated as a function of experimental conditions. Based on nuclear reaction analysis (NRA) and Fourier Transform Infrared (FTIR) measurements, no single linear relationship was found between fluorine concentration or film density and dielectric constant. Special attention was paid to the interaction of fluorine with metals. NRA and X-ray photoelectron spectroscopy (XPS) depth profiles showed that fluorine diffuses rapidly through aluminum and piles up at the free surface. The effect of various plasma treatments was investigated to passivate the surface of fluorinated silicon oxide. CF4 - O2 plasma treatment of the fluorinated oxide before aluminum deposition produced significant improvement in inhibiting fluorine diffusion into aluminum without increasing the dielectric constant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 191
Copyright
Copyright © Materials Research Society 1998

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