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Characterization of Two Electromigration Failure Modes In Submicron Vlsi

  • Em Atakov (a1), JJ. Clement (a1) and B. Miner (a1)

Abstract

Grain-bondary erosion-type voids and transgranular slit-like voids are found to be two competing electromigration failure modes in VLSI interconnects. The effects of interconnect linewidth, microstructure, process variables and stress conditions on the two failure modes were studied.

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Characterization of Two Electromigration Failure Modes In Submicron Vlsi

  • Em Atakov (a1), JJ. Clement (a1) and B. Miner (a1)

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