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Characterization of Transparent Conductors in Indium Zinc Oxide and Their Application to Thin-Film Transistor Liquid-Crystal Displays

Published online by Cambridge University Press:  10 February 2011

H. Takatsuji ,
T. Hiromori ,
K. Tsujimoto ,
S. Tsuji ,
K. Kurodac  and
H. Sakac
H. Takatsuji
Affiliation:
Display Technology, IBM Japan Ltd., Yamato-shi, Kanagawa 242, Japan
T. Hiromori
Affiliation:
LME, IBM Japan Ltd., Yasu-cho, Yasu-gun, Shiga 520-23, Japan
K. Tsujimoto
Affiliation:
Display Technology, IBM Japan Ltd., Yamato-shi, Kanagawa 242, Japan
S. Tsuji
Affiliation:
Display Technology, IBM Japan Ltd., Yamato-shi, Kanagawa 242, Japan
K. Kurodac
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464-01, Japan
H. Sakac
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464-01, Japan
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Abstract

Investigation of the properties of indium zinc oxide (IZO) thin films sputter-deposited on LCD-grade glass substrate showed that the resistivity of an IZO film decreases markedly as the substrate temperature is increased from room-temperature to 120°C. This phenomenon can be attributed to the growth of In-Zn intermetallic compounds in the amorphous region as a result of annealing. The compound growth was observed by plan-view transmission electron microscopy.

Although the transmittance and resistivity of IZO are inferior to those of indium-tin oxide, these disadvantages do not present any difficulties in the practical use of IZO for designing TFT-LCDs. Since IZO is an amorphous material, we propose a five-mask process with this characteristic.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 315
Copyright
Copyright © Materials Research Society 1998

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