Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-26T17:19:33.697Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Ti/TiN Films and SiO2/Ti Interfaces by Use of X-Ray Photoelectron Spectroscopy

Published online by Cambridge University Press:  21 February 2011

Joffre Bernard ,
Ercan Adem  and
Seshadri Ramaswami
Joffre Bernard
Affiliation:
Advanced Micro Devices, P.O. Box 3453, Sunnyvale CA 94088-3453
Ercan Adem
Affiliation:
Advanced Micro Devices, P.O. Box 3453, Sunnyvale CA 94088-3453
Seshadri Ramaswami
Affiliation:
Advanced Micro Devices, P.O. Box 3453, Sunnyvale CA 94088-3453
Get access

Abstract

The deposition and processing of thin films, such as barrier metals and anti-reflective coatings, can be enhanced using the information provided by various surface analysis techniques. We will show the application of x-ray photoelectron spectroscopy(XPS) to the production of Ti and TiN films suitable for use in ULSI CMOS integrated circuits. XPS can separate Ti and N photoelectron peaks and detect low (1.0-5.0 atomic%) contamination levels while providing surface and interface chemical state information. In this paper we will show that a) the effect of TiN deposition on subsequent Ti film quality from the same Ti target was determined to be minimal, b) the relation of anneal temperature to the extent of SiO2 reduction by Ti metal was characterized on SiO2/Ti/TiN structures for temperatures from 600°C to 800°C, and c) the absorption of O into TiN films from ambient air was detected and confirmed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 631
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Skoog, Douglas A., Principles of Instrumental Analysis. 3rd ed. (CBS College Publishing, New York, 1985), pp. 488–490 Google Scholar
2 Christie, A.B. in, Methods of Surface Analysis, edited by Walls, J. M. (Cambridge University Press, New York, 1989), pp. 136–137 Google Scholar
3 Seah, M. P. in, Practical Surface Analysis Volume 1. 2nd ed. (John Wiley and Sons, New York, 1990), pp. 207–209, equation 5-15Google Scholar
4 Beyers, R., Sinclair, R., and Thomas, M. E., J. Vac. Sci. Technol. B, Vol. 2, No. 4, Oct-Dec 1984, pp. 782–783 CrossRefGoogle Scholar
5 Wagner, Charles D., NIST X-ray Photoelectron Spectroscopy Database. (U.S. Department of Commerce, 1989)Google Scholar