Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-26T23:35:53.030Z Has data issue: false hasContentIssue false

Characterization of Thermally Evaporated Ag-Ge-S Thin Films

Published online by Cambridge University Press:  01 February 2011

Fei Wang
Affiliation:
fwang3@csulb.edu, California State University at Long Beach, Electrical Engineering, 1250 Bellflower Blvd., Long Beach, CA, 90840, United States
William Porter Dunn
Affiliation:
wdunn@calpoly.edu, California Polytechnic State University, San Luis Obispo, CA, 93407, United States
Mukul Jain
Affiliation:
mjain@calpoly.edu, California Polytechnic State University, San Luis Obispo, CA, 93407, United States
Carter De Leo
Affiliation:
l200inla@yahoo.com, California Polytechnic State University, San Luis Obispo, CA, 93407, United States
Nicholas Vicker
Affiliation:
nvicker@calpoly.edu, California Polytechnic State University, San Luis Obispo, CA, 93407, United States
Richard Savage
Affiliation:
rsavage@calpoly.edu, California Polytechnic State University, San Luis Obispo, CA, 93407, United States
Xiaomin Jin
Affiliation:
xjin@calpoly.edu, California Polytechnic State University, San Luis Obispo, CA, 93407, United States
Sergey Mamedov
Affiliation:
sergey.mamedov@jobinyvon.com, Horiba Jobin Yvon Inc, Edison, NJ, 08820, United States
Punit Boolchand
Affiliation:
pboolcha@ececs.uc.edu, University of Cincinnati, Cincinnati, OH, 45221, United States
Get access

Abstract

Thin films of ternary (GeS3)1−xAgx glasses (x=0.1 and 0.2) are studied in this work. Thin films are fabricated in a vacuum thermal evaporator at 3 different evaporation angles (0°, 30° and 45°). All thin film samples are examined in Raman spectroscopy. Raman results of both normally and obliquely deposited thin film samples reveal Ge-S CS modes (∼340cm−1) , Ge-S ES (∼360cm−1) modes, and thiogermanate modes Q1∼Q3 (390cm−1∼437cm−1). In addition, sharp peaks due to sulfur rings (S8) are observed at 218cm−1 and 470cm−1. Raman line-shapes of thin films are qualitatively consistent with their corresponding bulk glasses. However, the sharp peaks due to sulfur rings were not observed in bulk glasses. By comparing CS modes of thin films of three angles, we observe that normally deposited (0 degree) thin film shows a red-shift in center and a broadening in width. The film thickness of normally deposited films are significantly smaller comparing with that of corresponding obliquely deposited films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ovshingsky, S. R. Phys. Rev. Lett. 21, 1450 (1968)Google Scholar
2. Ohta, T. J. Optoelectron. Adv. Later. 3, 609 (2001)Google Scholar
3. Siegel, J. Schropp, A. Solis, J. Afonso, C.N. Wuttig, M. Appl. Phys. Lett. 84, 2250 (2004)Google Scholar
4. Ohta, T. Ovshynsky, E.R. in Photo-Induced Metastavility in Amorphous Semiconductors, edited by Kovobov, A.V. Wiley-VCH, Weinheim, p. 310 (2003)Google Scholar
5. Kozicki, M.N. Yun, M. Yang, S. J. Aberouette, J.P, Bird, J.P. Superlattices and Microstructures, 27, No. 5/6 (2000)Google Scholar
6. Kozicki, M. N. Gopalan, C. Balakrishnan, M. Park, M. Mitkova, M. Non-Volatile Memory Technology Symposium Proceedings 15-17 (2004)Google Scholar
7. Chaitanya, I. et al. presentation at American Physical Society March Meeting, Baltimore, MD, 2006 (unpublished)Google Scholar
8. Leo, Carter De, Senior Project Report, California Polytechnic State University (2007)Google Scholar
9. Sakamoto, et al. Appl. Phys. Lett. 82 (2003)Google Scholar
10. Boolchand, P. Wang, Fei and Vempati, Uday, presentation at American Physical Society March Meeting, Montreal, Canada 2004 (unpublished)Google Scholar
11. Wang, Fei, Mitkova, M. Boolchand, P. presentation at 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, Denver, Colorado 2007 (unpublished)Google Scholar
12. Wang, Fei, PhD Thesis, University of Cincinnati (2005)Google Scholar
13. Wang, Y. Mitkova, M. Georgiev, D.G. Mamedov, S. Boolchand, P. J. Phys: Condensed Matter, 15, S1573 (2003)Google Scholar
14. Mitkova, M. Wang, Y. Boolchand, P. Phys. Rev. Lett. 83, 3848 (1999)Google Scholar
15. Gu, M. X. et al. J. of Raman Spectrosc. 38, 780788 (2007)Google Scholar
16. Stabl, M. Ticky, L. Solid State Science, 7, 201207 (2005)Google Scholar