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Characterization of the ZnSe/GaAs Interface Layer by Tem and Spectroscopic Ellipsometry

Published online by Cambridge University Press:  25 February 2011

R. Dahmani ,
L. Salamanca-Riba ,
D. P. Beesabathina ,
N. V. Nguyen ,
D. Chandler-Horowitz  and
B. T. Jonker
R. Dahmani
Affiliation:
Departments of Chemical Physics and Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742–2115
L. Salamanca-Riba
Affiliation:
Departments of Chemical Physics and Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742–2115
D. P. Beesabathina
Affiliation:
Departments of Chemical Physics and Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742–2115
N. V. Nguyen
Affiliation:
Semiconductor Electronics Division, NIST, Gaithersburg, Maryland 20899
D. Chandler-Horowitz
Affiliation:
Semiconductor Electronics Division, NIST, Gaithersburg, Maryland 20899
B. T. Jonker
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5320
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Abstract

The interface between ZnSe thin films and GaAs substrates is characterized by High Resolution Transmission Electron Microscopy and room temperature Spectroscopic Ellipsometry. The films were grown on (001) GaAs by Molecular Beam Epitaxy. A three-phase model is used in the reduction of the ellipsometric data, from which the presence of a transition layer of Ga2Se3, with a thickness of less than 1 nm, is confirmed. These results corroborate the high resolution transmission electron microscopy images obtained from the same samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 271
Copyright
Copyright © Materials Research Society 1993

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References

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