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Characterization of the Visible Photoluminescence from Porous a-Si:H and Porous a-Si:C:H Thin Films

Published online by Cambridge University Press:  10 February 2011

M. J. Estes
Affiliation:
Avionics Directorate, Wright Laboratory, Wright-Patterson AFB, OH 45433-7331
L. R. Hirsch
Affiliation:
Department of Electrical and Computer Engineering and the Optoelectronic Computing Systems Center, University of Colorado, Boulder, CO 80309-0425
S. Wichart
Affiliation:
Department of Electrical and Computer Engineering and the Optoelectronic Computing Systems Center, University of Colorado, Boulder, CO 80309-0425
G. Moddel
Affiliation:
Department of Electrical and Computer Engineering and the Optoelectronic Computing Systems Center, University of Colorado, Boulder, CO 80309-0425
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Abstract

We report on the influence of doping, temperature, porosity, and bandgap on the visible photoluminescence properties of anodically-etched porous a-Si:H and a-Si:C:H thin films. Only boron-doped, p-type a-Si:H or a-Si:C:H samples exhibited any visible photoluminescence. We see evidence of discrete defect or impurity levels in temperature-dependent luminescence measurements. Unlike in porous crystalline silicon, we see no correlation of luminescence energy with porosity. We do, though, observe a correlation of luminescence energy with bandgap of the starting a-Si:C:H films. We discuss the implications of these observations on the nature of the luminescence mechanism.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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