Hostname: page-component-84b7d79bbc-c654p Total loading time: 0 Render date: 2024-07-25T07:55:00.803Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of the Visible Photoluminescence from Porous a-Si:H and Porous a-Si:C:H Thin Films

Published online by Cambridge University Press:  10 February 2011

M. J. Estes ,
L. R. Hirsch ,
S. Wichart  and
G. Moddel
M. J. Estes
Affiliation:
Avionics Directorate, Wright Laboratory, Wright-Patterson AFB, OH 45433-7331
L. R. Hirsch
Affiliation:
Department of Electrical and Computer Engineering and the Optoelectronic Computing Systems Center, University of Colorado, Boulder, CO 80309-0425
S. Wichart
Affiliation:
Department of Electrical and Computer Engineering and the Optoelectronic Computing Systems Center, University of Colorado, Boulder, CO 80309-0425
G. Moddel
Affiliation:
Department of Electrical and Computer Engineering and the Optoelectronic Computing Systems Center, University of Colorado, Boulder, CO 80309-0425
Get access

Abstract

We report on the influence of doping, temperature, porosity, and bandgap on the visible photoluminescence properties of anodically-etched porous a-Si:H and a-Si:C:H thin films. Only boron-doped, p-type a-Si:H or a-Si:C:H samples exhibited any visible photoluminescence. We see evidence of discrete defect or impurity levels in temperature-dependent luminescence measurements. Unlike in porous crystalline silicon, we see no correlation of luminescence energy with porosity. We do, though, observe a correlation of luminescence energy with bandgap of the starting a-Si:C:H films. We discuss the implications of these observations on the nature of the luminescence mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 831
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Bustarret, E., Ligeon, M. and Ortdga, L., Solid State Comm. 83, 461 (1992); Bustarret, E., J. Cali, Y. Cros, M. Brunel, I. Mihalcescu and M. Ligeon, J. Non-Cryst. Solid. 164–166, 937 (1993); Bustarret, E., M. Ligeon and M. Rosenbauer, Physica Status Solidi (b) 190, 111 (1995).Google Scholar
2. Lazarouk, S., Katsuba, S., Kazuchits, N., Cesare, G. D., Monica, S. L., Maiello, G., Proverbio, E. and Ferrari, A., in Microcrystalline and Nanocrystalline Semiconductors, edited by Brus, L., Hirose, M., Collins, R. W., Koch, F., and Tsai, C. C. (Mat. Res. Soc. Symp. Proc. 358, Pittsburgh, PA, 1994) p. 93.Google Scholar
3. Estes, M. J. and Moddel, G., Appl. Phys. Lett. 68, 1814 (1996).Google Scholar
4. Tiedje, T., Abeles, B. and Brooks, B. G., Phys. Rev. Lett. 54, 2545 (1985).Google Scholar
5. Lu, Z. N., Lockwood, D. J. and Baribeau, J.-M., Nature 378, 258 (1995).Google Scholar
6. Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
7. Bustarret, E. (private communication).Google Scholar
8. Street, R. A., in Semiconductors and Semimetals, edited by Pankove, J. (Academic Press, New York, NY, 1984) p. 197.Google Scholar
9. Augustine, B. H., Irene, E. A., He, Y. J., Price, K. J., McNeil, L. E., Christensen, K. N. and Maher, D. M., J. Appl. Phys. 78, 4020 (1995).Google Scholar
10. Seo, Y. H., Nahm, K. S., An, M. H., Suh, E.-K., Lee, Y. H., Lee, K. B. and Lee, H. J., Jpn. J. Appl. Phys. 33, 6425 (1994).Google Scholar
11. von Behren, J., Ücer, K. B., Tsybeskov, L., Vandyshev, J. V. and Fauchet, P. M., J. Vac. Sci. Tech. B 13, 1225 (1995).Google Scholar
12. Estes, M. J., PhD thesis, University of Colorado (1995), p. 56.Google Scholar
13. Williamson, D., Estes, M. J., Wichart, S., and Moddel, G., unpublished (1996).Google Scholar