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Characterization of the Piezoelectric Response of Aluminum Nitride Grown by dc Magnetron Sputtering for Applications in Thin-Film Resonators

Published online by Cambridge University Press:  15 February 2011

Rajan S. Naik
Affiliation:
Department of Materials Science and Engineering
Joseph J. Lutsky
Affiliation:
Department of Electrical Engineering and Computer Science Microsystems Technology Laboratories Massachusetts Institute of Technology, Cambridge MA 02139
Rafael Reif
Affiliation:
Department of Electrical Engineering and Computer Science Microsystems Technology Laboratories Massachusetts Institute of Technology, Cambridge MA 02139
Charles G. Sodini
Affiliation:
Department of Electrical Engineering and Computer Science Microsystems Technology Laboratories Massachusetts Institute of Technology, Cambridge MA 02139
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Abstract

Aluminum nitride is a promising material for use in thin-film bulk acoustic wave resonators for applications in RF bandpass filters. This paper discusses the requirements needed for a dc magnetron sputtering system to grow piezoelectrically active films with x-ray diffraction rocking curves of 3.3° on silicon substrates, 5° on aluminum substrates and oxygen concentrations of l at.%. For applications in integrated resonators, a materials characterization is insufficient in predicting the subsequent device performance. A simple acoustic device structure which allows a quick measurement of the device performance is used to extract maximum effective coupling coefficients keff2 of 0.009% at 3.4GHz and 0.002% at 2.4GHz for two different films with rocking curves of 5.7° and 9.0° respectively. This parameter extraction technique may be used to make relative comparisons between films grown under different deposition conditions.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

[1] Lakin, K. M., Kline, G. R. and McCarron, K. T., IEEE Proc. of the Ultrasonics Symposium 1992, 417.Google Scholar
[2] Saxler, A., Kung, P., Sun, C. J., Bigan, E. and Razeghi, M., Appl. Phys. Lett. 64, 339 (1993).Google Scholar
[3] Meng, W. J., Shell, J. A. and Perry, T. A., J. Appl. Phys. 75, 3446 (1993).Google Scholar
[4] Liaw, H. M. and Cronin, W., Ultrasonics Symposium, 1051, 267 (1993).Google Scholar
[5] Ruby, R. and Merchant, P. M., IEEE Int. Freq. Control Symp. 1994, 135.Google Scholar
[6] Lutsky, J. J., Naik, R. S., Reif, R. and Sodini, C. G., to be presented at 1996 International Electron Devices Meeting, San Francisco, CA, December 1996.Google Scholar
[7] Lakin, K. M. and Wang, J. S., Ultrasonics Symposium., 1089, 834 (1980).Google Scholar
[8] Lakin, K. M., (private communication).Google Scholar