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Characterization of Surface Preparation Methods Using A Novel Scanning Kelvin Probe

Published online by Cambridge University Press:  21 February 2011

Iain D. Baikie  and
Gerrit H. Bruggink
Iain D. Baikie
Affiliation:
Department of Applied Physics, The Robert Gordon University, St. Andrew's Street, Aberdeen ABI 1HG, Scotland
Gerrit H. Bruggink
Affiliation:
Department of Applied Physics, The Robert Gordon University, St. Andrew's Street, Aberdeen ABI 1HG, Scotland
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Abstract

Using a novel microscopic Scanning Kelvin Probe (SKP), featuring Array Head Detector, work function topographies of metal, semiconductor and metal/semiconductor surfaces have been investigated.

The work function is an extremely important indicator of surface and interface condition and has been utilized to study preparation methods, surface roughness, stress defects and contamination, both in UHV and air environments.

Extension of the basic technique, via illumination of the surface under the probe, permits determination of the local density of states (LDOS). Variation in LDOS, due to both monochromatic and white light, can be used to study surface metal contamination, oxide thickness and bulk contamination.

The Kelvin method utilizes a non-contact, non-destructive, measurement mode. It produces work function and height topographies of both flat and rough metallic and semiconducting specimens in air, UHV and liquid environments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 423
Copyright
Copyright © Materials Research Society 1993

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References

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