Skip to main content Accessibility help

Characterization of Surface Preparation Methods Using A Novel Scanning Kelvin Probe

  • Iain D. Baikie (a1) and Gerrit H. Bruggink (a1)


Using a novel microscopic Scanning Kelvin Probe (SKP), featuring Array Head Detector, work function topographies of metal, semiconductor and metal/semiconductor surfaces have been investigated.

The work function is an extremely important indicator of surface and interface condition and has been utilized to study preparation methods, surface roughness, stress defects and contamination, both in UHV and air environments.

Extension of the basic technique, via illumination of the surface under the probe, permits determination of the local density of states (LDOS). Variation in LDOS, due to both monochromatic and white light, can be used to study surface metal contamination, oxide thickness and bulk contamination.

The Kelvin method utilizes a non-contact, non-destructive, measurement mode. It produces work function and height topographies of both flat and rough metallic and semiconducting specimens in air, UHV and liquid environments.



Hide All
1. Thomson, W., later Lord Kelvin, Phil. Mag. 46, 82 (1898).
2. Zisman, W.A., Rev. Scd. Instrum. 3, 267 (1932).
3. Meyer, J.A., Baikie, I.D., Lopinski, G.P., Prybyla, J.A. and Estrup, P.J, J. Vac. Scl. Technol. A8, 2468 (1990).
4. Baikie, I.D., Ph.D. Thesis, University of Twente, 1988.
5. Kinlock, C.D. and McMullen, A.I., J. Sci. Instrum. 36, 347 (1959).
6. Grahm, L. and Hertz, C.H., Physiologia Plantarum 15, 96 (1962).
7. Balkie, I.D. In Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing, edited by Nemanich, R.J, Helms, C.R., Hirose, M and Rubloff, G.W. (Mater. Res. Soc. Proc. 259, Pittsburgh, PA 1992), pp. 149153.
8. Bruggink, G. H. and Baikie, I.D., Proc. Residual Stress Conf., University of Twente (1991).
9. Baikie, I.D. in Chemical Perspectives of Microelectronic Materials, edited by Interrante, L.V., Jensen, K.F., Dubois, L.H. and Gross, M.E. (Mater. Res. Soc. Proc. 204, Pittsburgh, PA 1991) pp. 363368.
10. Baikie, I.D. and Venderbosch, E. in Photo-Induced Space Charge Effects in Semiconductors, edited by Nolte, D.D, Haegel, N.M. and Goosen, K.W. (Mater. Res. Soc. Proc. 261, Pittsburgh, PA, 1992) pp. 149154.
11. Baikie, I.D., Mackenzie, S., P.J.Z. Estrup and Meyer, J.A., Rev. Sci. Instrum. 62, 1326 (1991).
12. Baikie, I.D., Werf, K.O. van der, Oerbekke, H., Broeze, J. and Silfhout, A. van, Rev. Sci. Instrum. 60, 930 (1989).
13. Balkie, I.D., Venderbosch, E., Meyer, J.A. and Estrup, P.J.Z., Rev. Sci. Instrum. 62, 725 (1991).

Characterization of Surface Preparation Methods Using A Novel Scanning Kelvin Probe

  • Iain D. Baikie (a1) and Gerrit H. Bruggink (a1)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed