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Characterization of Stress and Mosaicity in Homoepitaxial Diamond Films

Published online by Cambridge University Press:  10 February 2011

W. Brock Alexander ,
Paul H. Holloway ,
Patrick Doering  and
Robert Linares
W. Brock Alexander
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
Paul H. Holloway
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
Patrick Doering
Affiliation:
LMA, Inc. 93 West Tech Center, Medfield, MA 02052
Robert Linares
Affiliation:
LMA, Inc. 93 West Tech Center, Medfield, MA 02052
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Abstract

Diamond films were grown on (100) and (110) oriented natural diamond substrates by hot filament assisted chemical vapor deposition (HFCVD) to thicknesses of 7 to 100μm. Raman spectroscopy was used to measure tensile stresses of up to ∼2GPa for some of the (110) films. The development of stress was attributed to the incorporation of impurities (Re, Mo, and H). Impurity concentrations were greater at the interface than through the film thickness. Up to∼11% H and 50ppm Re were measured in the films with secondary ion mass spectrometry (SIMS). Homoepitaxial diamond films were further characterized using a seven crystal high resolution x-ray diffraction system. This new characterization tool allowed the separation of the effects of mosaicity from those of variation in lattice parameter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 57
Copyright
Copyright © Materials Research Society 1996

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References

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