Hostname: page-component-7479d7b7d-m9pkr Total loading time: 0 Render date: 2024-07-12T17:17:29.790Z Has data issue: false hasContentIssue false

Characterization of Sol Gel Prepared KTN Thin Films and Powders by Raman, XRD, and Thermal Analysis Techniques.

Published online by Cambridge University Press:  01 February 2011

A.A. Savvinov
Affiliation:
University of Puerto Rico, Department of Physics, San Juan, PR.
S.B. Majumder
Affiliation:
University of Puerto Rico, Department of Physics, San Juan, PR.
R.S. Katiyar
Affiliation:
University of Puerto Rico, Department of Physics, San Juan, PR.
Get access

Abstract

The renewed interest in KTa1-xNbxO (KTN) mixed perovskite materials is connected with their remarkable dielectric properties in the dilute compositions. KTN thin films with x = 0.35 have been prepared on different substrates by sol-gel technique as well as a set of powders with x = 0, 0.05, 0.1, 0.25, 0.48, 0.65, 0.75, and 1. Properties of the material change drastically with the change of x, because of relaxation of both translational and inversion symmetry due to a static disorder in the Nb distribution and the dynamic effect of a precursor ferroelectric order above Tc. Special attention was paid to the characteristic feature of coupling of the single-phonon state to a two-acoustic-phonon feature through anharmonic terms in the potential function as well as behavior of the TO3 mode which becomes a narrow peak of the first-order scattering in the tetragonal ferroelectric phase and shows a tendency to split below Tc2 in the orthorhombic phase. The wide range of x allows better understanding of dynamic processes in the KTN bulk materials which in turn helps in the studies of thin films. The above mentioned materials were studied using Raman scattering, XRD, and thermal analysis techniques.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lines, M.E. and Glass, A.M., “Principles and Applications of Ferroelectrics and Related Materials,” Clarendon Press, Oxford, 1977.Google Scholar
2. Wemple, S.H., Phys. Rev. 137, A1575 (1965).Google Scholar
3. Perry, C.H. and McNelly, T.F., Phys. Rev. 154, 456 (1967).Google Scholar
4. Bruce, A.D. and Cowley, R.A., Adv. Phys. 29, 220 (1980).Google Scholar
5. Prater, R.L., Chase, L.L., and Boatner, L.A., Phys. Rev. B 23, 221 (1981).Google Scholar
6. Manlief, S.K. and Fan, H.Y., Phys. Rev. B 5, 4046 (1972).Google Scholar
7. Perry, C.H., Hayes, R.R., and Tornberg, N.E., in “Light Scattering in Solids,” Balkanski, M., Leite, R.C.C., Porto, S.P.S., Eds., p. 812, Flammarion, Paris, 1976.Google Scholar
8. Savvinov, A.A., Siny, I.G., Katiyar, R.S., and Knauss, L.A., Ferroelectric Letters 25, 59 (1999).Google Scholar
9. Bao, Dinghua, Kuang, Anxiang, J. Crystal Growth, 171, 314 (1997)Google Scholar
10. Savvinov, A.A., Siny, I.G., Katiyar, R.S., Pumarol, M., Mourad, H.A. and Fernandez, F.E., Integrated Ferroelectrics, 29, A13 (2000).Google Scholar