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Characterization of SI/SiO2 Interfaces Using Tem Lattice Imaging and X-Ray Micro Diffraction Techniques

  • P. K. Roy (a1) and V. C. Kannan (a1)

Abstract

This paper discusses two analytical techniques: (i) a high resolution transmission electron microscopy (TEM) technique of imaging Si (111) planes at Si/SiO2 interface, and (ii) an accurate measurement of the stress in silicon (Σsi) just below the interface using x-ray microdiffraction (XRMD) technique. The combination of these two techniques allows us to probe Si/SiO2 interfaces for various oxides (75-250Å) grown by different oxidation processes.

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