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Characterization of SI/SiO2 Interfaces Using Tem Lattice Imaging and X-Ray Micro Diffraction Techniques

Published online by Cambridge University Press:  28 February 2011

P. K. Roy  and
V. C. Kannan
P. K. Roy
Affiliation:
AT&T Bell Laboratories, Allentown, PA 18103
V. C. Kannan
Affiliation:
AT&T Bell Laboratories, Allentown, PA 18103
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Abstract

This paper discusses two analytical techniques: (i) a high resolution transmission electron microscopy (TEM) technique of imaging Si (111) planes at Si/SiO2 interface, and (ii) an accurate measurement of the stress in silicon (Σsi) just below the interface using x-ray microdiffraction (XRMD) technique. The combination of these two techniques allows us to probe Si/SiO2 interfaces for various oxides (75-250Å) grown by different oxidation processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 367
Copyright
Copyright © Materials Research Society 1989

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