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Characterization of Ruo2 Films Prepared by Rf Reactive Magnetron Sputtering

Published online by Cambridge University Press:  10 February 2011

Li-jian Meng  and
M.P. dos Santos
Li-jian Meng
Affiliation:
Departamento de Física, Instituto Superior de Engenharia do Porto, Rua de São Tomé, 4200 Porto, Portugal. Fax: xx351-2-8321159, e-mail: ljmeng@fisica.uminho.pt
M.P. dos Santos
Affiliation:
Departamento de Física, Universidade do Minho, 4710 Braga, Portugal
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Abstract

Ruthenium dioxide films have been prepared by rf reactive magnetron sputtering at different oxygen partial pressures and total sputtering pressures. The films have been characterized by scanning electron microscopy, X-ray diffraction and electrical conductivity. The films prepared at low oxygen partial pressure and total pressure show a strong preferred orientation along the [110] direction. As both pressures increased, the peak intensity decreases. All the films are subject to a compressive stress. As the total pressure is decreased and the oxygen partial pressure is increased, the stress increases. When the total pressure is lower than 6 × 10−3 mbar and the oxygen partial pressure is higher than 1 × 103 mbar, the films peeled off automatically from the substrate because of the high stress. The films prepared at high oxygen partial pressure and high total pressure have a rough surface and those prepared at low pressure show smooth surface. In this paper, these phenomena have been discussed. In addition, the electrical properties of the films are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 141
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. McEvoy, A.J. and Gissler, W., J. Appl. Phys., 52 (1982)1251.Google Scholar
2. Al-Shareef, H.N., Bellur, K.R., Auciello, O. and Kinggon, A.I., Thin Solid Films, 256 (1995) 73.Google Scholar
3. Elbaum, L. K., Wittmer, M. and Yee, D.S., Appl. Phys. Lett., 50 (1987)1879.Google Scholar
4. Takemura, K., Sakuma, T. and Miyasaka, Y., Appl. Phys. Lett., 64 (1994)2967.Google Scholar
5. Kolawa, E., So, F.C.T., Pan, E.T.S. and Nicolet, M.A., Appl. Phys. Lett., 50 (1987)854.Google Scholar
6. Bai, G.R., Wang, A., Foster, C.M. and Vetrone, J., Thin Solid Films, 310 (1997)75.Google Scholar
7. Patil, P.S., Ennaoui, E.A., Lokhande, C.D., Muller, M., Giersig, M., Diesner, K. and Tributsch, H., Thin Solid Films, 310 (1997)57.Google Scholar
8. Hong, S.K., Kim, H.J. and Yang, H.G., J. Appl. Phys., 80 (1996)822.Google Scholar
9. Jia, Q.X., Song, S.G., Wu, X.D., Cho, J.H., Foltyn, S.R., Findikoglu, A.T. and Smith, J.L., Appl. Phys. Lett., 68 (1996)1069.Google Scholar
10. Lee, J.G., Kim, Y.T., Min, S.K. and Choh, S.H., J. Appl. Phys., 77 (1995)5473.Google Scholar
11. Mar, S.Y., Chen, C.S., Huang, Y.S. and Tiong, K.K., Applied Surface Science, 90 (1995)497.Google Scholar
12. Meng, L.J., Fortunato, E., Nunos, R. and Santos, M.P. dos, J. Korean Phys. Soc., 32 (1998)S1835.Google Scholar
13. Powder Diffraction File, Joint Committee on Powder Diffraction Standards, 1967 (ASTM, Philadelphia, PA, 1967) Card 43–1027.Google Scholar
14. Thornton, J.A., J. Vac. Sci. Technol. 11(1974)666.Google Scholar
15. Mar, S.Y., Liang, J.S., Sun, C.Y. Huang, Y.S., Thin Solid Films, 238(1994)158.Google Scholar
16. Huang, Y.S. and Pollak, F.H., Solid State Commun., 43(1982)921.Google Scholar