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Characterization of Quantum well Structures Using Microscope-Spectrophotometry

Published online by Cambridge University Press:  22 February 2011

Rachel M Geatches ,
Karen J Reeson ,
Alan J Criddle  and
Roger P Webb
Rachel M Geatches
Affiliation:
Department of Mineralogy, Natural History Museum, London, SW7 5BD, United Kingdom Department of Electrical and Electronic Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
Karen J Reeson
Affiliation:
Department of Electrical and Electronic Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
Alan J Criddle
Affiliation:
Department of Mineralogy, Natural History Museum, London, SW7 5BD, United Kingdom
Roger P Webb
Affiliation:
Department of Electrical and Electronic Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
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Abstract

In this paper the application of microscope-spectrophotometry to the nondestructive characterization of a variety of multi-layer GaAs/A1GaAs structures, is described. Spectral reflectance results are used to indirectly determine variations in aluminium content, and the interdependency of aluminium content with layer thicknesses. The penetration depth of light from the visible spectrum is assessed from the correlation between spectral reflectance measurements and fitted optical models. Finally, a series of single quantum wells are investigated, and it is concluded that a significant improvement in the characterization of these materials will be achieved with an extension of the spectral measurement range into the ultra violet.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 111
Copyright
Copyright © Materials Research Society 1994

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References

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