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Characterization of PECVD SixOyNz:H Films and its Correlation to Device Performance and Reliability

Published online by Cambridge University Press:  22 February 2011

Mansour Moinpour ,
Ken Mack ,
Johnny Cham ,
Farhad Moghadam  and
Byron Williams
Mansour Moinpour
Affiliation:
Intel Corp., 2200 Bowers Ave., Santa Clara, California 94245
Ken Mack
Affiliation:
Intel Corp., 2200 Bowers Ave., Santa Clara, California 94245
Johnny Cham
Affiliation:
Intel Corp., 2200 Bowers Ave., Santa Clara, California 94245
Farhad Moghadam
Affiliation:
Intel Corp., 2200 Bowers Ave., Santa Clara, California 94245
Byron Williams
Affiliation:
Stanford University, Stanford, Ca. 94305
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Abstract

For integrated circuits, the integrity and film quality of the final passivation layer plays an important role in the device performance and reliability. Hydrogenated amorphous silicon oxynitride (α-SixNyOz:H) films deposited by plasma enhanced chemical vapor deposition (PECVD) have been extensively used for final device passivation applications. In this paper, a detailed characterization of PECVD oxynitride process for 200 mm Si wafer processing is presented. Silicon oxynitride of various compositions were deposited by changing the amounts of silane, ammonia, nitrogen and nitrous oxide in the reactant gas stream. Ultraviolet/Visible (UV/VIS) spectroscopy, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), and refractive index measurements were used to examine the variation in physical, optical and electrical properties. A correlation is observed between the oxynitride film composition, mainly N-H/Si-H ratio, and UV transmissivity (UV %T) which is of particular interest for memory applications. Effects of oxynitride film quality on e-test parameters and device performance are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 75
Copyright
Copyright © Materials Research Society 1994

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References

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