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Characterization of Palladium Acetylacetonate as a CVD Precursor for Pd Metallization

Published online by Cambridge University Press:  22 February 2011

Steven P. Kowalczyk ,
Michael Ldgdlund ,
Mats Fahlman  and
William R. Salaneck
Steven P. Kowalczyk
Affiliation:
IBM Research, T. J. Watson Research Center, Yorktown Heights, N. Y., 10598
Michael Ldgdlund
Affiliation:
Department of Physics, Linköping University, Linköping, Sweden
Mats Fahlman
Affiliation:
Department of Physics, Linköping University, Linköping, Sweden
William R. Salaneck
Affiliation:
Department of Physics, Linköping University, Linköping, Sweden
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Abstract

Palladium acetylacctonate has received much consideration as a possible precursor for chemical vapor deposition of metallic palladium films for a variety of microelectronic applications. We have studied the adsorption and decomposition of palladium acetylacetonate ongold, polyimide, silicon and silver surfaces to understand the initial mechanisms of metallic palladium film formation. In situ x-ray photoelcctron spectroscopy was used to characterized the films after adsorption and their decomposition after thermal treatment or laser irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 353
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Baum, T.M., Miller, D.C., OToole, T.R., Chem. Mater 3, 714 (1991).Google Scholar
2. Thomas, R.R. and Park, J.M., J. Electrochem. Soc. 136 1661 (1989).Google Scholar
3. Gottslebcn, O., Roesky, II.W., Stuke, M., Adv. Mater. 3, 201(1991).Google Scholar
4. Esrom, II. and Kogelschatz, U., Appl. Surf. Sci. 46, 158 (1990).Google Scholar
5. Zhang, Y. and Stuke, M., Appl. Surf. Sci. 46, 153 (1990).Google Scholar
6. Baufay, L. and Gross, M.E., Mat. Res. Soc. Symp. Proc. 101, 89 (1988).Google Scholar
7. Cole, U.S., Liu, Y.S., Rose, J.W., Guida, R., Appl. Phys. Lett. 53, 2111 (1988).Google Scholar
8. Kim, Y.-G., Bialy, S., Sauf, G.T., Miller, R.W., Spence, J.T., Dowben, P.A., Datta, S.. J. Micromech. Microeng. 1, 42 (1991).Google Scholar
9. Staur, G.T., Dowben, P.A., Emrich, K., Barfuss, S., Hirschwald, W., Boag, N.M., J. Phys. Chem. 93, 749 (1989).Google Scholar
10. Stark, T.J., Mayer, T.M., Russell, P.E., J. Vac. Sci. Technol. B 9, 3475 (1991).Google Scholar
11. Gozum, J.E., Pollina, D.M., Jensen, J.A., Girolami, G.S., J. Am. Chem. Soc. 110, 2688 (1988).Google Scholar
12. Salancck, W.R., Bergman, R., Sundgren, J.-E., Rockctt, A., Motooka, T., Greene, J.E., Surf. Sci. 198, 461 (1988).Google Scholar
13. Kowalczyk, S.P., Platau, A., Salaneck, W.R., Ritsko, J.J., (unpublished).Google Scholar