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Characterization Of Nitrogen Species For P-Type Doping Of Znse

Published online by Cambridge University Press:  15 February 2011

K. Kimura ,
H. Kajiyama ,
S. Miwa ,
T. Y Asuda ,
L. H. Kuo ,
C. G. Jin ,
K. Tanaka  and
T. Yao
K. Kimura
Affiliation:
Joint Research Center for Atom Technology, 1–1–4 Higashi, Tsukuba 305, Japan Angstrom Technology Partnership, 1––4 Higashi, Tsukuba 305, Japan
H. Kajiyama
Affiliation:
Joint Research Center for Atom Technology, 1–1–4 Higashi, Tsukuba 305, Japan Angstrom Technology Partnership, 1––4 Higashi, Tsukuba 305, Japan
S. Miwa
Affiliation:
Joint Research Center for Atom Technology, 1–1–4 Higashi, Tsukuba 305, Japan Angstrom Technology Partnership, 1––4 Higashi, Tsukuba 305, Japan
T. Y Asuda
Affiliation:
Joint Research Center for Atom Technology, 1–1–4 Higashi, Tsukuba 305, Japan National Institute for Advanced Interdisciplinary Research, 1–1–4 Higashi, Tsukuba 305, Japan
L. H. Kuo
Affiliation:
Joint Research Center for Atom Technology, 1–1–4 Higashi, Tsukuba 305, Japan Angstrom Technology Partnership, 1––4 Higashi, Tsukuba 305, Japan
C. G. Jin
Affiliation:
Joint Research Center for Atom Technology, 1–1–4 Higashi, Tsukuba 305, Japan University of Tsukuba, 1–1 Tennohdai, Tsukuba 305, Japan
K. Tanaka
Affiliation:
Joint Research Center for Atom Technology, 1–1–4 Higashi, Tsukuba 305, Japan National Institute for Advanced Interdisciplinary Research, 1–1–4 Higashi, Tsukuba 305, Japan University of Tsukuba, 1–1 Tennohdai, Tsukuba 305, Japan
T. Yao
Affiliation:
Joint Research Center for Atom Technology, 1–1–4 Higashi, Tsukuba 305, Japan National Institute for Advanced Interdisciplinary Research, 1–1–4 Higashi, Tsukuba 305, Japan Institute for Materials Research, Tohoku University, 2–1–1 Katahira, Aoba-ku, Sendai 980, Japan
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Abstract

Laser-induced fluorescence(LIF) spectroscopy has been applied to the detection of excited nitrogen molecules coming out of a plasma source used for p-type doping of ZnSe. With the use of a fluorescence-photon-counting system, the fluorescence of nitrogen molecules in the A3 Σ u+ (v=0) state was observed even in a high vacuum condition ˜ 10−4 Pa. The correlation between LIF intensity of nitrogen molecules in the A3 Σ u+(v=0) state and the net acceptor concentration of nitrogen doped ZnSe epitaxial layers was investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 51
Copyright
Copyright © Materials Research Society 1996

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References

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