One of the primary challenges in the application of hydrogenated microcrystalline silicon (μc-Si:H) to photovoltaic cells is achieving high growth rates while maintaining good material quality over a wide process window. The rapid characterization of the material without generating a complete cell is thus a useful tool to determine said process window. Infrared absorption due to the various vibrational modes of the material has been used as a coarse tool towards this purpose, but the use of FTIR to perform this diagnosis limits the substrates upon which the analysis can be performed. We report on the use of high wave-number (1800-2200 cm-1) Raman scattering to perform a similar role of telltale peak detection directly on solar cells and on substrates suitable for thin-film photovoltaics. We evaluate material grown from SiF4 by RF-PECVD and from SiH4 by Matrix Distributed Electron Cyclotron Resonance (MDECR-) PECVD.