Skip to main content Accessibility help
×
Home

Characterization of Metal/Si1-xGex/Si Diodes Fabricated by Cryogenic Processing

  • L. He (a1), E. Li (a1), Z.Q. Shi (a2), R.L. Jiang (a3), J. L. Liu (a3), Y. Shi (a3) and Y.D. Zheng (a3)...

Abstract

Schottky diodes were fabricated by evaporating metal thin layers on p-Si1-xGex by cryogenic processing. The cryogenic processing, with substrate temperature cooled to as low as 77K (LT), has been successfully used to enhance metal/III-V semiconductor Schottky barrier height[1]. The electrical characteristics of the diodes were investigated by current-voltage (IV) and current-temperature (I-T) measurements. In order to study the effect of silicide formation on diode characteristics, furnace annealing was performed in nitrogen atmosphere at 450°C and 550°C, respectively. Two kinds of samples with gemanium composition x of 0.17 and 0.20 were used. The electrical characteristics showed the barrier height фB decreased with the increase of the gemanium composition. The annealing temperatures up till to 550°C did not affect the I-V characteristics at room temperature, however, the conduction mechanism showed obvious difference comparing to the as-deposited diodes by I-V-T analysis. For Pd as Schottky metal, very similar results were obtained for the LT as-deposited diodes and the ordinary room temperature (RT) deposited diodes after 550° annealing, they both showed thermionic emission dominated conduction mechanism.

Copyright

References

Hide All
1. Shi, Z. Q. and Anderson, W. A., J. Appl. Phys. 72, 3803 (1992)
2. Xiao, X., Sturm, J. C., Parihar, S. R., Lyon, S. A., Meyerhofer, D., Palfrey, S. and Shallcross, F. V., IEEE Electron Device Lett. 14, 199 (1993)
3. Kanaya, H., Hasegawa, F., Yamaka, E., T. Moriyama and Nakajima, M., Jpn. J. Appl. Phys. 28, L544 (1989)
4. Jimenez, J. R., Xiao, X., J.Sturm, C., Pellegrini, P. W. and Weeks, M. M.. J. Appl. Phys. 75, 5160 (1994)
5. Aubry, V., Meyer, F. Warren, P. and Dutartre, D., Appl. Phys. Lett. 63, 2520 (1993)
6. Zheng, Y., Zhang, R., Jiang, R., Hu, L., Zhong, P., Mo, S., Yu, S., Li, Q. and Feng, D., Proceedings of 20th International Conference on the Physics of Semiconductors, edited by Anastassakis, E. M. and Joannopoulos, J. D. (World Scientific, Singapore, 1990), p. 869
7. Rhoderick, E. H. and Williams, R. H., eds., Metal-Semiconductor Contacts, 2nd edition, (Oxford Science Publications, 1988), p. 108
8. Shi, Z. Q., Anderson, W. A., Fu, L. P. and Petrou, A., Solid-State Electron., 36, 147 (1993)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed