Skip to main content Accessibility help
×
Home

Characterization of Metal-Oxide-Silicon Interface by Monoenergetic Positron Beam

  • Yuzuru Ohji (a1), Akira Uedono (a2), Long Wei (a3), Yasushi Tabuki (a3) and Shoichiro Tanigawa (a3)...

Abstract

MOS device interfaces are investigated using carrier injection and monoenergetic positron beam experiments. Carrier injection reveals that the holes injected into gate S1O2 film seem to be the main cause of the interface state generation and the dielectric breakdown of thin-gate SiO2. Positron annihilation experiments show that the positron diffuse along the electric field in the Si and the gate SiO2 and are trapped in the interface region before annihilation. The obtained value of 5 at the SiO2/Si interface was 0.500 ±0.003. The behavior of holes in the SiO2 and SiO2/Si interface are simulated using the monoenergetic positron annihilation technique.

Copyright

References

Hide All
1) SChultz, P. J. and Lynn, K. G., Rev. Mod. Phys. 60, 701, (1988)
2) Nielsen, B., Lynn, K. G., Chen, Y. C, and Welch, D. O., Appl. Phys. Lett. 51, 1022, (1987)
3) Nielsen, B., Lynn, K. G., Welch, D. O., Leung, T. C and Rubloff, G. W., Phys. Rev. B40, 1434, (1989)
4) Lynn, K. G., Nielsen, B., Welch, D. O., Can. J. Phys. 67, 818, (1989)
5) Corbel, C., Hautojärvi, P., Mäkinen, J., Vehanen, A. and Mathiot, D., J. Phys. Condens. Matter 1, 6315, (1989)
6) Leung, T. C, Kong, Y., Lynn, K. G., Nielsen, B., Weinberg, Z. A. and Rubloff, G. W., Appl. Phys. Lett. 58, 86, (1991)
7) Nicollian, E. H. and Brews, J. R., MOS (Metal-Oxide-Semiconductor) Physics and Technology (Wiley, New York, 1982)
8) Uedono, A., Tanigawa, S., Suzuki, K., and Watanabe, K., Appl. Phys. Lett. 53, 473, (1988)
9) Miki, H., Asada, K., Sugano, T., and Ohji, Y., Solid-State Electr. 33, 395, (1990)
10) Vehanen, A., Saarinen, K., Hautojärvi, P. and Huomo, H., Phys. Rev. B35, 4606, (1987)
11) Sze, S. M., Physics of Semiconductor Devices (Wiley, New York, 1981)

Characterization of Metal-Oxide-Silicon Interface by Monoenergetic Positron Beam

  • Yuzuru Ohji (a1), Akira Uedono (a2), Long Wei (a3), Yasushi Tabuki (a3) and Shoichiro Tanigawa (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed