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Characterization of LPCVD of Silicon Nitride in a Rapid Thermal Processor

Published online by Cambridge University Press:  25 February 2011

F. Scott Johnson ,
Roderick M. Miller ,
Mehmet C. Öztüirk  and
Jimmie J. Wortman
F. Scott Johnson
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering Box 7911, Raleigh, NC 27695-7911
Roderick M. Miller
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering Box 7911, Raleigh, NC 27695-7911
Mehmet C. Öztüirk
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering Box 7911, Raleigh, NC 27695-7911
Jimmie J. Wortman
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering Box 7911, Raleigh, NC 27695-7911
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Abstract

Low pressure chemical vapor deposition of silicon nitride has been studied using a cold-walled, lamp heated, rapid thermal processor. Films were deposited at low presure using both silane and dichlorosilane, diluted in hydrogen and argon carrier gasses. The dichlorosilane and ammonia reaction was found to be unsuitable for use in the cold-walled system. Rapid thermal chemical vapor depositions using silane and ammonia did not result in “bullseye” non-uniformities reported for low presure depositions in conventional hot-walled tube furnaces. Ammonia to silane ratios of 120:1 were found to result in stoichiometric silicon nitride films. Deposition rates are well suited for dielectricapplications. Electrical characteristics are comparable to those of films deposited using APCVD and LPCVD methods.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 345
Copyright
Copyright © Materials Research Society 1989

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References

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