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Characterization of Ion-Implanted SiO2 Properties Applicable to Laser Processing

  • T. C. Teng (a1), Y. Shiau (a1), Y. S. Chen (a1), C. Skinner (a1), J. D. Peng (a2) and L. J. Palkuti (a2)...

Abstract

The use of an antireflection oxide film applicable to laser annealing process has been investigated. The optical properties of the antireflection oxide film are changed by ion implantation although the antireflection characteristics are similar to calculations based on nominal optical constants. Implantation annealing can be achieved at powers lower than predicted by calculations. Using the antireflection(AR) technique, n+-p junction diodes were fabricated. Reverse bias junction leakage is around 10-9 A/cm2 , comparable to those annealed thermally. Short channel MOS devices were also fabricated and indicated much better resistance to the short channel effect than those thermally annealed.

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2. Palkuti, L. J. et al. , Proceeding of 1980 IEEE Electronic Components Conference San Francisco, California April, 1980.
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7. Teng, T. C. et al. , Extended Abstracts of Electrochemical Society Meeting, Hollywood, Florida, Volume 80–2, p. 1086.

Characterization of Ion-Implanted SiO2 Properties Applicable to Laser Processing

  • T. C. Teng (a1), Y. Shiau (a1), Y. S. Chen (a1), C. Skinner (a1), J. D. Peng (a2) and L. J. Palkuti (a2)...

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