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Characterization of Interfacial Structure in Large Lattice Mismatch Heteroepitaxy: Ag/Si (111)

Published online by Cambridge University Press:  26 February 2011

D.C. McKenna ,
G.-C. Wang  and
K. Rajan
D.C. McKenna
Affiliation:
Physics Department,, Rensselaer Polytechnic Institute, Troy,, NY 12180–3590
G.-C. Wang
Affiliation:
Physics Department,, Rensselaer Polytechnic Institute, Troy,, NY 12180–3590
K. Rajan
Affiliation:
Materials Engineering Department,, Rensselaer Polytechnic Institute, Troy,, NY 12180–3590
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Abstract

The interfacial structure of a large lattice mismatched (˜25%) (111) Ag-Si system was studied by using transmission electron diffraction (SADP - Selected Area Diffraction Pattern). The epitaxial films of Ag (600–1200Å) were grown by MBE on flat Si(111) and misoriented Si(1ll) surfaces. We have examined the interfacial structures of the Ag on 2° misoriented Si(111) using diffraction patterns of cross sectional view. Through a detail analysis of thelocation and shape of the diffraction spots, we can determine the epitaxial relationship between Ag and Si, the small tilt angle of Ag(111) planes withrespect to the misoriented Si(111), the period of the finite terrace size of the misoriented Si substrate, and the size of the ordered region in the Ag film. The O-lattice analysis developed by Bollmann has beenapplied to this interface andthe result is compared with the SADP observation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 643
Copyright
Copyright © Materials Research Society 1991

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References

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