Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-26T10:30:19.362Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Group III-Nitride Based Surface Acoustic Wave Devices for High Temperature Applications

Published online by Cambridge University Press:  01 March 2011

J. Justice ,
L.E. Rodak ,
V. Narang ,
K. Lee ,
L.A. Hornak  and
D. Korakakis
J. Justice
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506 U.S.A.
L.E. Rodak
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506 U.S.A.
V. Narang
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506 U.S.A.
K. Lee
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506 U.S.A.
L.A. Hornak
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506 U.S.A.
D. Korakakis
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506 U.S.A.
Get access

Abstract

In this study, aluminum nitride (AlN) and gallium nitride (GaN) thin films have been grown via metal organic vapor phase epitaxy (MOVPE) on silicon and sapphire substrates. Samples were annealed at temperatures ranging from 450 to 1000 °C in atmosphere. AlN and GaN thin film quality has been characterized before and after annealing using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and atomic force microscopy (AFM). Surface acoustic wave (SAW) devices with titanium/platinum interdigital transducers (IDTs) designed to operate at the characteristic frequency and fifth harmonic have been realized using traditional optical photolithographic processes. SAW devices on GaN were thermally cycled from 450 to 850 °C. The S21 scattering parameter of SAW devices was measured before and after thermal cycling by a vector network analyzer (VNA). An approach for the suppression of electromagnetic feedthrough (EF) to improve device performance is discussed. Feasibility of 5th harmonic excitation for GHz operation without sub-micron fabrication is also investigated. SAW devices have also been fabricated on the more traditional SAW substrate, lithium niobate (LiNbO3), and device response was compared with those on AlN and GaN at room temperature.

Keywords

III-Vacousticsensor
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1299: Symposium S – Microelectromechanical Systems—Materials and Devices IV , 2011 , mrsf10-1299-s09-13
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Aubert, T., Elmazria, O., Assouar, B., Bouvot, L., and Oudich, M., Appl. Phys. Lett., 96, 203503 (2010).CrossRefGoogle Scholar
[2] Naraine, P.M. and Campbell, C.K., IEEE Ultrason. Symp., 0090–5607/84, 93 (1984).Google Scholar
[3] Farrell, R., Pagán, V. R., Kabulski, A., Kuchibhatla, S., Harman, J., Kasarla, K. R., Rodak, L. E., Famouri, P., Hensel, J., and Korakakis, D., Mater. Res. Soc. Symp. Proc., 1052, 1052-DD06-18 (2008).Google Scholar
[4] Phana, Duy-Thach and Chung, Gwiy-Sang, App. Sur. Sci., 257(9), 4339 (2011).CrossRefGoogle Scholar
[5] Lee, S.H., Jeong, H.H., Bae, S.B., Choi, H.C., Lee, J.H. and Lee, Y.H., IEEE Trans. Elec. Dev., 48(3), 524 (2001).Google Scholar
[6] Petroni, S., Tripoli, G., Combi, C., Vigna, B., De Vittorio, M., Todaro, M.T., Epifani, G., Cingolani, R. and Passaseo, A., Supperlattices and Microstructures, 36, 825 (2004).CrossRefGoogle Scholar
[7] Choi, K.H., Kim, H.J., Chung, S.J., Kim, J.Y., Lee, T.K. and Kim, Y.J., J. Mater. Res., 18(5), 1157 (2003).CrossRefGoogle Scholar