Hostname: page-component-77c89778f8-vpsfw Total loading time: 0 Render date: 2024-07-19T03:31:23.606Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Gasb-Based Alloy Semiconductors

Published online by Cambridge University Press:  25 February 2011

H. Uekita ,
N. Kitamura ,
M. Ichimura ,
A. Usami  and
T. Wada
H. Uekita
Affiliation:
Nagoya Institute of Technology, Department of Electrical and Computer Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
N. Kitamura
Affiliation:
Suzuka College of Technology, Department of Electrical Engineering, Shiroko-cho, Suzuka 510-02, Japan
M. Ichimura
Affiliation:
Nagoya Institute of Technology, Department of Electrical and Computer Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
A. Usami
Affiliation:
Nagoya Institute of Technology, Department of Electrical and Computer Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. Wada
Affiliation:
Nagoya Institute of Technology, Department of Electrical and Computer Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Get access

Abstract

GaSb, AlxGa1-xSb, and AlxGa1-xSb epitaxial layers were grown by the liquid-phase epitaxy and characterized by photoluminescence, Raman spectroscopy, and double-crystal X-ray diffraction. The concentration of residual acceptors which are related to structural defects decreased with lowering growth temperature, but the GaSb epitaxial layer grown at an extremely low temperature of 270°C had poor crystalline quality. The AlxGa1-xSb (x≥0.15) and AlxGa1-xSb (x=0.02) epitaxial layers grown at 270 °C, however, had much better quality than the GaSb epitaxial layer grown at the same temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 169
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Law, H.D., Chin, R., Nakano, K. and Milano, R.A., IEEE J. Quantum Electron. QE-17, 275 (1981)Google Scholar
2. Hildebrand, O., Kuebart, W., Benz, K.W. and Pilkuhm, M.H., IEEE J. Quantum Electron. QE-17, 284 (1981)Google Scholar
3. Hall, R.N. and Racette, J.H., J. Appl. Phys. 32, 856 (1961)Google Scholar
4. Maaren, M.H. van, J. Phys. Chem. Solid. 27, 472 (1966)Google Scholar
5. Nakashima, K., Jpn. J. Appl. Phys. 20, 1085 (1981)Google Scholar
6. Kitamura, N., Higuchi, K., Uekita, H., Ichimura, M., Usami, A. and Wada, T., Jpn. J. Appl. Phys. 29, 1403 (1990)Google Scholar
7. Sasaki, A., Onishi, A., Sogawa, E., Mizugaki, S., Takeda, Y. and Fujita, S., Inst. Phys. Conf. Ser. No. 63, (The Institute of Physics, Bristol, 1982), p. 83.Google Scholar
8. Cheng, K.Y. and Pearson, G.L., J. Electrochem. Soc. 124, 753 (1977)Google Scholar
9. Blom, G.M. and Plaskett, T.S., J. Electrochem. Soc. 118, 1831 (1971)Google Scholar
10. Johnson, E.J. and Fan, H.Y., Phys. Rev. 139, A1991 (1965)Google Scholar
11. Baxter, R.D., Bate, R.T. and Reid, F.J., J. Phys. Chem. Solids 26, 41 (1965)CrossRefGoogle Scholar
12. Benoita, C. Guillaume, la and Lavallard, P., Phys. Rev. B 5, 4900 (1972)Google Scholar
13. Higuchi, K., Kitamura, N., Hattori, Y., Ichimura, M. and Wada, T., to be published in Proc. Int. Conf. Sci. & Tech. of Defect Control in Semicond.Google Scholar
14. Tanaka, A., Sugiura, T. and Sukegawa, T., Oyo Buturi 52, 326 (1983), (in Japanese)Google Scholar
15. Yang, B.H., Wang, Z.G., He, H.J. and Lin, L.Y., J. Crystal Growth 103, 371 (1990)Google Scholar
16. Beneking, H., Narozy, P. and Emeis, N., Inst. Phys. Conf. Ser. No. 79, (The Institute of Physics, Bristol, 1986), p. 403 Google Scholar