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Characterization of Ga-Mn Decagonal Quasicrystals in GaAs

Published online by Cambridge University Press:  17 March 2011

K. Sun  and
N. D. Browning
K. Sun
Affiliation:
Department of Physics (M/C273), University of Illinois at Chicago, 845 W. Taylor St. Chicago IL 60607-7059
N. D. Browning
Affiliation:
Department of Physics (M/C273), University of Illinois at Chicago, 845 W. Taylor St. Chicago IL 60607-7059
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Abstract

Ga-Mn decagonal quasicrystals (DQC), as well as a Ga-Mn approximant and a normal crystal in GaAs are investigated by electron energy-loss spectroscopy (EELS) and energy dispersive X- ray spectroscopy (EDS) combined with Z-contrast imaging. Plasmon peak positions (Ep), full- width-half-maxima (FWHM) and Mn L3/L2ratios of these three phases are derived from their low-loss spectra and core-loss spectra respectively. Mn, Ga and As distributions in ion implanted GaAs layers are characterized by EDS at line-scan mode. These results show that the Ga-Mn DQC has higher Ep and FWHMs than those of its normal crystal counterpart, as well as all other reported QCs. The much larger L3/L2 intensity ratio of the Ga-Mn DQC over that of the Al-Mn icosahedral quasicrystals (IQC) may suggest Mn atoms in the Ga-Mn DQC have much larger local magnetic moments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 643: Symposium K – Quasicrystals-Preparation, Properties, and Applications , 2000 , K4.5
Copyright
Copyright © Materials Research Society 2001

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