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Characterization of Gaas/Si/GaAs Heterointerfaces

Published online by Cambridge University Press:  25 February 2011

Zuzanna Liliental-Weber  and
Raymond P. Mariella
Zuzanna Liliental-Weber
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley CA 94720
Raymond P. Mariella
Affiliation:
Lawrence Livermore National Laboratory, L-228, P. 0. Box 808, Livermore, CA 94550
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Abstract

Transmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 241
Copyright
Copyright © Materials Research Society 1989

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References

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