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Characterization of Defects in N-Type 6H-SiC Single Crystals by Optical Admittance Spectroscopy

Published online by Cambridge University Press:  21 February 2011

A. O. Evwaraye ,
S. R. Smith  and
W. C. Mitchel
A. O. Evwaraye
Affiliation:
Wright Laboratory, Materials Directorate, WL/MLPO, Wright-Patterson Air Force Base, Ohio 45433–7707.
S. R. Smith
Affiliation:
Wright Laboratory, Materials Directorate, WL/MLPO, Wright-Patterson Air Force Base, Ohio 45433–7707.
W. C. Mitchel
Affiliation:
Wright Laboratory, Materials Directorate, WL/MLPO, Wright-Patterson Air Force Base, Ohio 45433–7707.
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Abstract

Optical admittance spectroscopy is a technique for measuring the conductance and capacitance of a junction under illumination as a function of the wavelength of the light and the frequency of the measuring AC signal. This technique has been applied to characterize deep defect levels in 6H-SiC:N. Nitrogen is a donor atom in 6H-SiC which substitutes for carbon in three inequivalent sites (h, k1, k2). giving rise to n-type conduction. Deep defect levels attributable to transition metal impurities have also been identified in 6H-SiC:N. We have examined persistent photoconductance in this material by optical admittance spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 711
Copyright
Copyright © Materials Research Society 1994

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References

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