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Characterization of Defect Structures in 3C-SiC Single Crystals Using Synchrotron White Beam X-ray Topography

Published online by Cambridge University Press:  15 February 2011

W. Huang ,
M. Dudley  and
C. Fazi
W. Huang
Affiliation:
Dept. of Materials Science and Engineering, SUNY at SB, Stony Brook, NY1 1794–2275
M. Dudley
Affiliation:
Dept. of Materials Science and Engineering, SUNY at SB, Stony Brook, NY1 1794–2275
C. Fazi
Affiliation:
U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, USA
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Abstract

Defect structures in (111) 3C-SiC single crystals, grown using the Baikov technique, have been studied using Synchrotron White Beam X-ray Topography (SWBXT). The major types of defects include complex growth sector boundary structures, double positioning twins, stacking faults on { 111 } planes, inclusions and dislocations (including growth dislocations and partial dislocations bounding stacking faults). Detailed stacking fault and double positioning twin configurations are determined using a combination of Nomarski interference microscopy, SEM and white beam x-ray topography in both transmission and reflection geometries. Possible defect generation phenomena are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 545
Copyright
Copyright © Materials Research Society 1996

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