Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-24T13:44:17.186Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Deep Impurities in Semiconductors by Terahertz Tunnel Ionization

Published online by Cambridge University Press:  10 February 2011

E. Ziemann ,
S.D. Ganichev ,
I.N. Yassievich ,
K. Schmalzv  and
W. Prettl
E. Ziemann
Affiliation:
Institut für Experimentelle und Angewandte Physik, Universitit Regensburg, 93040 Regensburg, Germany
S.D. Ganichev
Affiliation:
Institut für Experimentelle und Angewandte Physik, Universitit Regensburg, 93040 Regensburg, Germany A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
I.N. Yassievich
Affiliation:
A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
K. Schmalzv
Affiliation:
Institut für Halbleiter-Physik, 15230 Frankfurt / Oder, Germany
W. Prettl
Affiliation:
Institut für Experimentelle und Angewandte Physik, Universitit Regensburg, 93040 Regensburg, Germany
Get access

Abstract

The ionization of deep impurity centers by high intensity far-infrared radiation, with photon energies tens of times lower than the impurity binding energy, has been investigated. It is shown that the ionization is caused by phonon-assisted tunneling in the electric field of radiation, in which carrier emission is accompanied by electron tunneling and defect tunneling in the configuration space. The field and temperature dependencies of the ionization probability allow to obtain defect parameters like tunneling times and the Huang-Rhys factor as well as the basic structure of the defect adiabatic potentials. In very strong fields, the ionization changes to direct tunneling without assistance of phonons. It is shown that for the case of charged impurities and in a relatively low electric field strength the Poole-Frenkel effect plays a dominant role in ionization, which allows to identify the charge state of the center. Within a broad range of intensities, wavelengths and temperature, the terahertz electric field of the radiation acts as a static field. An enhancement of tunneling with increase of frequency has been observed for very high frequencies or low temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 595
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Ganichev, S.D., Prettl, W. and Huggard, P.G., Phys. Rev. Lett. 71, 3882 (1993)Google Scholar
[2] Ganichev, S.D., Prettl, W. and Yassievich, I.N., Phys. Solid State 39, 1703 (1997)Google Scholar
[3] Ganichev, S.D., Ziemann, E., Gleim, Th., Prettl, W., Yassievich, I.N., Perel, V.I., Wilke, I. and Haller, E.E., Phys. Rev. Lett. 80, 2409 (1998)Google Scholar
[4] Ganichev, S.D., Yassievich, I.N., Prettl, W., Diener, J., Meyer, B.K. and Benz, K.W., Phys. Rev. Lett. 75, 1590 (1995)Google Scholar
[5] Abakumov, V.N., Perel, V.I. and Yassievich, I.N., Nonradiative Recombination in Semiconductors, Modern Problems in Condensed Matter Sciences Vol. 33, ed. Agranovich, V.M. and Maradudin, A.A. (1991)Google Scholar
[6] Tasch, A.F. Jr. and Sah, C.T., Phys. Rev. B 1, 800 (1970)Google Scholar
[7] Mooney, M. and Theis, T.N., Comments Cond. Mat. Phys. 16, 167 (1992)Google Scholar
[8] Pakhomov, A.A., Polupanov, A.F., Galiev, V.I. and Imamov, E.Z., Sov. Phys. Solid State 33, 416 (1991)Google Scholar
[9] Ganichev, S.D., Yassievich, I.N. and Prettl, W., Semicond. Sci. Technol. 11, 679 (1996)Google Scholar
[10] Ganichev, S.D., Diener, J., Yassievich, I.N. and Prettl, W., Europhys. Lett., 29, 315 (1995)Google Scholar
[11] Ganichev, S. D. and Diener, J. and Prettl, W., Solid State Comm. 92, 883 (1994)Google Scholar