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Characterization of Cleaved GaAs(110) with a Scanning Photoemission Microscope Capable of Submicron Resolution

  • A. K. Ray-Chaudhuri (a1), W. Ng (a1), S. Liang (a1), S. Singh (a1), H. Solak (a1) and F. Cerrina (a1)...

Abstract

We have utilized a scanning photoemission spectromicroscope with sub-micron spatial resolution to observe microscopic Fermi level pinning on the cleaved GaAs(110) surface. We present micrographs which identify pinning that is highly localized to the vicinity of a single linear cleavage step. This extends previous work utilizing scanning Kelvin probe and imaging photoelectron microscopy conducted at lower spatial resolution. A sub-monolayer coverage of In uniformly pins the surface, thus allowing us to observe only the image contrast mechanism resulting from topography. From this one can determine the spatial extent of defects near a cleavage step. Initial observations indicate that Fermi level pinning can extend from a cleavage step over the range of 2 μm. This indicates the additional presence of defects at the adjacent surfaces of the step.

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References

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Characterization of Cleaved GaAs(110) with a Scanning Photoemission Microscope Capable of Submicron Resolution

  • A. K. Ray-Chaudhuri (a1), W. Ng (a1), S. Liang (a1), S. Singh (a1), H. Solak (a1) and F. Cerrina (a1)...

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