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Characterization of Cadmium Zinc Tellurium Obtained by Modified - Bridgman Technique

Published online by Cambridge University Press:  22 February 2011

D.R. Acosta  and
F. Rabago
D.R. Acosta
Affiliation:
Instituto de Fisica, UNAM, Department of Materia Condensada, México, D.F., México
F. Rabago
Affiliation:
Instituto de Física, U.A.S.L.P., Av. A. Obregón 64, 78000 San Luis Potosí, S.L.P., México
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Abstract

The growth of ternary semiconductor compounds Cd1-ZZnx. Te leads to possible uses of this material like optoelectronic devices. In the present work we report the structural characterization of Cd0.96Zn0.04Te obtained by modified - Bridgman technique. Structural studies were carried out using Scanning Electron Microscopy (SEM) and Conventional and High Resolution Electron Microscopy (TEM and HREM, respectively). Selected Area Electron Diffraction (SAED) was used to determine local variations in composition. Characteristics of the growth of the bulk samples were observed and structural details that might be related with the stability of ternary phase were derived.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 433
Copyright
Copyright © Materials Research Society 1994

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