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Characterization of Boron Carbide Films Formed by PECVD

Published online by Cambridge University Press:  25 February 2011

John Mazurowski ,
Sunwoo Lee ,
G. Ramseyer  and
P. A. Dowben
John Mazurowski
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY. GE Electronics Laboratory, Syracuse, NY.
Sunwoo Lee
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY.
G. Ramseyer
Affiliation:
GE Electronics Laboratory, Syracuse, NY.
P. A. Dowben
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY.
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Abstract

Boron carbide films have been fabricated from pentaborane (B5H9) and methane using plasma enhanced chemical vapor deposition (PECVD). Availability of high quality specimens has facilitated analysis of electronic and optical properties. We have undertaken measurements of photoluminescence spectra and infra-red band-edge absorption. Results show that the bandgap is strongly influenced by the ratio of boron to carbon. There is evidence for the existence of shallow trapping levels.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 637
Copyright
Copyright © Materials Research Society 1992

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References

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