Hostname: page-component-6d856f89d9-nr6nt Total loading time: 0 Render date: 2024-07-16T05:04:02.447Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Atmospheric Impurities in Tungsten Silicide Films by Secondary Ion Mass Spectrometry (SIMS)

Published online by Cambridge University Press:  15 February 2011

Salman Mitha  and
David B. Sams
Salman Mitha
Affiliation:
Charles Evans and Associates, 301 Chesapeake Dr. Redwood City, CA
David B. Sams
Affiliation:
Charles Evans and Associates, 301 Chesapeake Dr. Redwood City, CA
Get access

Abstract

Concentrations of atmospheric impurities in tungsten silicide films and impurity areal densities silicide / polysilicon interface can usually only be measured using Secondary Ion Mass Spectrometry (SIMS). Normally these measurements are made using a Cs+ primary beam with negative secondary ions being monitored. This mode is used to achieve the best possible detection limits. However the Relative Sensitivity Factors (RSFs) used to quantify the impurities, as well as the reference matrix signal, change dramatically in going from one matrix to the other. These changes affect the quantification of the impurities at the interface. An alternate mode of analysis would be to use the Cs+ primary beam and monitor MCs+ ions, where M is the impurity, because these ions typically have less matrix dependent RSFs. We measure carbon and oxygen in a tungsten silicide film on polysilicon using both modes of analysis. Preliminary data indicates that we have determined the absolute accuracy of interface areal density to within a factor of 2.2 for oxygen and to within a factor of 1.5 for carbon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 605
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nicolet, M. A. in VLSI Electronic Microstructure Scienceedited by Einspruch, N. and Larrabee, G. (Academic Press, New York, 1983), p. 330 Google Scholar
2. Baumann, S. M., Hitzman, C. J., Ivanov, I. C., Craig, A. Y. and Lindley, P. M. in Advanced Metalization for Devices and Circuits - Science Technology and Manufacturability, edited by Muraka, S.P, Katz, A., Tu, K. N. and Maex, K. (Mater. Res. Soc. Proc. Pittsburg, PA, 1994) p. 675 Google Scholar
3. Wilson, R. G., Stevie, F. A. and Magee, C. V. in Secondary Ion Mass Spectrometry; A Practical Handbook for Depth Profiling and Bulk Impurity Analysis (John Wiley and Sons, New York, 1989) p. 3.1–1Google Scholar
4. Vickerman, J. C. in Secondary Ion Spectroscopy; Principles and Applications, edited by Vickerman, J. C., Brown, A. and Reed, N. M. (Clarendon Pres, Oxford, 1989) p. 56 Google Scholar