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Characterization of A-Si : H and A-SiGe : H Films in Liquid Crystal Light Valve

Published online by Cambridge University Press:  21 February 2011

Jianmin Qiao ,
Gaorong Han ,
Piyi Du ,
Weiqiang Han ,
Wanquan Huang  and
Zishang Ding
Jianmin Qiao
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
Gaorong Han
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
Piyi Du
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
Weiqiang Han
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
Wanquan Huang
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
Zishang Ding
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
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Abstract

A-Si : H and a-Si : H/a-SiGe : H heterojunctions have been prepared as the photoconductors in the liquid crystal light valves. The impedance matching conditions of the a-Si : H and the heterojunction in the valves have been carefully analysed, which has shown that the adjustment for the capacitance of the photoconductor is the key procedure for the matching, but the low photocapacitance effect in the a-Si : H limits the further improvements on the matching. The formation of the a-Si : H/a-SiGe : H diode promotes the photocapacitance effect in the photoconductor, and the matching behavior in the valve is greatly improved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 179
Copyright
Copyright © Materials Research Society 1991

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References

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