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Characterization of Arsenic Implanted Epitaxially Aligned Polysilicon-on-Silicon Films

Published online by Cambridge University Press:  22 February 2011

J. L. Hoyt ,
E. F. Crabbé ,
R. F. W. Pease  and
J. F. Gibbons
J. L. Hoyt
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
E. F. Crabbé
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
R. F. W. Pease
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
J. F. Gibbons
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
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Abstract

Nonuniformities in the polysilicon-to-silicon interface and in the polysilicon structure are expected to produce a nonuniform diffusion front when arsenic is diffused from polysilicon during epitaxial alignment. Using transmission electron microscopy, we find surprisingly uniform arsenic diffusion fronts in the underlying silicon substrate following high temperature annealing. Several explanations of this result are proposed. We also report new evidence of a strong reduction in the time to achieve complete epitaxial transformation of the polysilicon when the polysilicon thickness is reduced. A corresponding reduction in the associated arsenic penetration depth is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 279
Copyright
Copyright © Materials Research Society 1988

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References

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