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Characterization of AlGaAs/GaAs Heterojunction Bipolar Transistors Using Photoreflectance and Spectral Ellipsometry

Published online by Cambridge University Press:  15 February 2011

Patricia B. Smith ,
Tae S. Kim ,
Lissa K. Magel ,
Walter M. Duncan ,
A. Vance Ley  and
Nick A. Brette
Patricia B. Smith
Affiliation:
Texas Instruments Incorporated Materials Science Laboratory, Dallas, TX 75265
Tae S. Kim
Affiliation:
Texas Instruments Incorporated Materials Science Laboratory, Dallas, TX 75265
Lissa K. Magel
Affiliation:
Texas Instruments Incorporated Materials Science Laboratory, Dallas, TX 75265
Walter M. Duncan
Affiliation:
Texas Instruments Incorporated Materials Science Laboratory, Dallas, TX 75265
A. Vance Ley
Affiliation:
Defense Systems and Electronics Group, Garland, TX 75041
Nick A. Brette
Affiliation:
Defense Systems and Electronics Group, Dallas, TX 75265
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Abstract

Photoreflectance spectroscopy (PR) and spectral ellipsometry (SE) have been used to characterize the doping and structure of heterojunction bipolar transistors (HBT). This information provides a more complete description of the epitaxial HBT structure than is possible by relying solely on electrical characterization of specially processed test structures. Additional benefit is derived from the nondestructive nature of both SE and PR. The measurements are fast enough to be implemented on all production-bound HBT material. We describe our recent results comparing capacitance-voltage measurements with PRderived doping levels in the emitter layer of the HBT. We also describe some work comparing SE fit results with Auger electron spectroscopy depth profiles for InGaAs contact layer composition and thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 253
Copyright
Copyright © Materials Research Society 1996

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