Hostname: page-component-848d4c4894-cjp7w Total loading time: 0 Render date: 2024-06-20T13:59:02.186Z Has data issue: false hasContentIssue false
  • English
  • Français

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

Published online by Cambridge University Press:  01 February 2011

Jin-Heong Yim ,
Jung-Bae Kim ,
Hyun-Dam Jeong ,
Yi-Yeoul Lyu ,
Sang Kook Mah ,
Jingyu Hyeon-Lee ,
Kwang Hee Lee ,
Seok Chang ,
Lyong Sun Pu  and
Y. F. Hu
...Show all authors
Jin-Heong Yim
Affiliation:
Electronic-Materials Lab., Samsung Advanced Institiue of Technology (SAIT), San 14-1, Nongseo-ri, Kiheung-eup, Yongin-shi, Kyungki-do, Korea, 449-712
Jung-Bae Kim
Affiliation:
Electronic-Materials Lab., Samsung Advanced Institiue of Technology (SAIT), San 14-1, Nongseo-ri, Kiheung-eup, Yongin-shi, Kyungki-do, Korea, 449-712
Hyun-Dam Jeong
Affiliation:
Electronic-Materials Lab., Samsung Advanced Institiue of Technology (SAIT), San 14-1, Nongseo-ri, Kiheung-eup, Yongin-shi, Kyungki-do, Korea, 449-712
Yi-Yeoul Lyu
Affiliation:
Electronic-Materials Lab., Samsung Advanced Institiue of Technology (SAIT), San 14-1, Nongseo-ri, Kiheung-eup, Yongin-shi, Kyungki-do, Korea, 449-712
Sang Kook Mah
Affiliation:
Electronic-Materials Lab., Samsung Advanced Institiue of Technology (SAIT), San 14-1, Nongseo-ri, Kiheung-eup, Yongin-shi, Kyungki-do, Korea, 449-712
Jingyu Hyeon-Lee
Affiliation:
Electronic-Materials Lab., Samsung Advanced Institiue of Technology (SAIT), San 14-1, Nongseo-ri, Kiheung-eup, Yongin-shi, Kyungki-do, Korea, 449-712
Kwang Hee Lee
Affiliation:
Electronic-Materials Lab., Samsung Advanced Institiue of Technology (SAIT), San 14-1, Nongseo-ri, Kiheung-eup, Yongin-shi, Kyungki-do, Korea, 449-712
Seok Chang
Affiliation:
Electronic-Materials Lab., Samsung Advanced Institiue of Technology (SAIT), San 14-1, Nongseo-ri, Kiheung-eup, Yongin-shi, Kyungki-do, Korea, 449-712
Lyong Sun Pu
Affiliation:
Electronic-Materials Lab., Samsung Advanced Institiue of Technology (SAIT), San 14-1, Nongseo-ri, Kiheung-eup, Yongin-shi, Kyungki-do, Korea, 449-712 Department of Advanced Materials, Sung Kyun Kwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Kyunggi-do 440-746, Korea
Y. F. Hu
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109
J.N. Sun
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109
D.W. Gidley
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109
Get access

Abstract

Porous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E8.10
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hedrick, J.L., Miller, R.D., Hawker, C.J., Carter, K.R., Volksen, W., Yoon, D.Y., Trollsas, M., Adv. Mater., 10, 1049(1998).Google Scholar
2. Nguyen, C.V., Carter, K.R., Hawker, C.J., Hedrick, J.L., Jaffe, R.L., Miller, R.D., Remenar, J.F., Rhee, H.W., Rice, P.M., Toney, M.F., Trollsas, M. and Yoon, D.Y., Chem. Mater., 11, 3080(1999).Google Scholar
3. Mikoshiba, S., and Hayase, S., J. Mater. Chem., 9, 591(1999).Google Scholar
4. Kohl, A.T., Mimna, R., Shick, R., Rhodes, L., Wang, Z.L. and Kohl, P.A., Electrochemical and solid-state Letter, 2(2), 77(1999).Google Scholar
5. Aoi, N., Jpn. J. Appl. Phys., 36, 1355(1997).Google Scholar
6. Yang, S., Mirau, P.A., Pai, C., Nalamasu, O., Reichmanis, E., Pai, J.C., Obeng, Y.S., Seputro, J., Lin, E.K., Lee, H., Sun, J., and Gidley, D.W., Chem. Mater., 14, 369(2002).Google Scholar
7. Polarz, S., Smarsly, B., Bronstein, L., Antonietti, M., Angew. Chem., 113(23), 4549(2001).Google Scholar
8. Yim, J.H, Lyu, Y.Y, Hwang, I.S., Jeong, H.D., Mah, S.K., Hyeon-Lee, J., Lee, K.H., Park, J.G., Hu, Y.F., Sun, J.N., and Gidley, D.W., Abstract of International SEMATECH Ultra Low k Workshop, 31(2002)Google Scholar
9. Yim, J.H, Lyu, Y.Y, Jeong, H.D., Song, S. A., Hwang, I.S., Hyeon-Lee, J., Mah, S.K., Chang, S., Park, J.G., Hu, Y.F., Sun, J.N., and Gidley, D.W., Advanced Functional Materials, 13(5), 386(2003)Google Scholar
10. Croft, A.P. and Bartsch, R.A., Tetrahedron, 39(9), 1417(1983).Google Scholar
11. Yim, J.H., Lyu, Y.Y., Jeong, H.D., Mah, S. K., Hyeon-Lee, J., Hahn, J.H., Kim, G. S., Chang, S., Park, J.G., J. Applied Polymer Science, in pressGoogle Scholar
12. Gidley, D. W., Frieze, W. E., Yee, A.F., Dull, T. L., Ho, H.M. and Ryan, E.T., Phys. Rev. B, Rapid Comm., 60(8), R5157(1999).Google Scholar
13. Gidley, D. W., Frieze, W. E., Dull, T. L., Sun, J., Yee, A. F., Nguyen, C. V. and Yoon, D. Y., Appl. Phys. Lett., 76(10),1282(2000).Google Scholar
14. Dull, T. L., Frieze, W. E., Gidley, D.W., Sun, J.N. and Yee, A.F., J. Phys. Chem. B, 105(20), 4657(2001).Google Scholar