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Characterization and Modeling of Polysilicon TFTs and TFT-CMOS Circuits for Integrated Driver Applications

Published online by Cambridge University Press:  21 February 2011

Dae M. Kim ,
Feng Qian ,
Michael J. Esralian ,
Dana E. Whitlow ,
Robert G. Culter  and
Stephen C. Thayer
Dae M. Kim
Affiliation:
Tektronix, Inc. P. O. Box 500, Beaverton, OR 97077
Feng Qian
Affiliation:
Tektronix, Inc. P. O. Box 500, Beaverton, OR 97077
Michael J. Esralian
Affiliation:
Tektronix, Inc. P. O. Box 500, Beaverton, OR 97077
Dana E. Whitlow
Affiliation:
Tektronix, Inc. P. O. Box 500, Beaverton, OR 97077
Robert G. Culter
Affiliation:
Tektronix, Inc. P. O. Box 500, Beaverton, OR 97077
Stephen C. Thayer
Affiliation:
Tektronix, Inc. P. O. Box 500, Beaverton, OR 97077
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Abstract

Polysilicon TFTs and TFT-CMOS circuits are characterized. Circuit elements examined comprise subcircuits pertinent to integrated drivers suitable for flat panel display applications. Performance features of multistage static row drivers are also presented. Additionally, AC measurement of TFTs was performed in order to extract device parameters. The channel mobility measured in a time of flight environment is presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 363
Copyright
Copyright © Materials Research Society 1990

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References

1. Qian, F. et al. , IEEE Trans. Electron Devices, ED-35, 1501 (1988)Google Scholar
2. Jackson, W. B. et al. , Appl. Phys. Lett. 43, 195 (1983)Google Scholar
3. Khan, B. A. and Pandya, R., Mater. Res. Soc. Symp. Proc., 106, 353 (1988)Google Scholar
4. Chiang, A. et al. , Mater. Res. Soc. Symp. Proc., 106, (1988)Google Scholar
5. Morozumi, S. et al. , Proc. Japan Display '86 196 (1986)Google Scholar
6. Gonzalez, G., Microwave Transistor Amplifiers. Analysis and Desion, Printice-Hall (1984)Google Scholar
7. Tsividis, Y. P., Operation and Modelina of MOS Transistor, McGraw-Hill (1987)Google Scholar
8. Glaser, L. A. and Dobberpuhl, D. W., The Desian and Analysis of VLSI Circuits (1985)Google Scholar