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Characterization and Growth Mechanism of B12As2 Epitaxial Layers Grown on (1-100) 15R-SiC

  • Hui Chen (a1), Guan Wang (a2), Michael Dudley (a3), Zhou Xu (a4), James. H. Edgar (a5), Tim Batten (a6), Martin Kuball (a7), Lihua Zhang (a8) and Yimei Zhu (a9)...

Abstract

A systematic study is presented of the heteroepitaxial growth of B12As2 on m-plane 15R-SiC. In contrast to previous studies of B12As2 on other substrates, including (100) Si, (110) Si, (111) Si and (0001) 6H-SiC, single crystalline and untwinned B12As2 was achieved on m-plane 15R-SiC. Observations of IBA on m-plane (1100)15R-SiC by synchrotron white beam x-ray topography (SWBXT) and high resolution transmission electron microscopy (HRTEM) confirm the good quality of the films on the 15R-SiC substrates. The growth mechanism of IBA on m-plane 15R-SiC is discussed. This work demonstrates that m-plane 15R-SiC is potentially a good substrate choice to grow high quality B12As2 epilayers.

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Keywords

Characterization and Growth Mechanism of B12As2 Epitaxial Layers Grown on (1-100) 15R-SiC

  • Hui Chen (a1), Guan Wang (a2), Michael Dudley (a3), Zhou Xu (a4), James. H. Edgar (a5), Tim Batten (a6), Martin Kuball (a7), Lihua Zhang (a8) and Yimei Zhu (a9)...

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