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Characterization and Applicatons of Arsenic-Implanted Mocvd-Grown GaAs Structures

  • Fereydoon Namavar (a1), N. Kalkhoran (a1), A. Cremins (a1) and S. Vernon (a1)

Abstract

Arsenic precipitates can be formed in GaAs using arsenic implantation and annealing, thereby producing very high resistivity (surface or buried) GaAs layers. Arsenic-implanted materials are similar to low-temperature (LT) GaAs:As buffer layers grown by molecular beam epitaxy (MBE) which are used for eliminating side- and backgating problems in GaAs circuits. Arsenic implantation is not only a simple and economical technique for device isolation but also can improve the quality of individual devices. Through surface passivation, arsenic implantation can reduce gate-to-drain leakage in and enhance the breakdown voltage of GaAs-based metal semiconductor field-effect transistors (MESFETs) and high electron mobility transistors (HEMTs). High resistivity thin surface layers may be used as gate insulators for GaAs-based metal insulator semiconductor (MIS) FETs, leading to the development of a novel GaAs-based complementary metal insulator semiconductor (CMIS) technology like advanced Si-based complementary metal oxide semiconductor (CMOS) technology but with higher radiation hardness and operational speed.

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Characterization and Applicatons of Arsenic-Implanted Mocvd-Grown GaAs Structures

  • Fereydoon Namavar (a1), N. Kalkhoran (a1), A. Cremins (a1) and S. Vernon (a1)

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