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Characteristics of Polyethylene Thin Films Deposited by Ionized Cluster Beam

Published online by Cambridge University Press:  21 February 2011

Hiroaki Usui ,
Kouji Numata ,
Hitoshi Dohmoto ,
Isao Yamada  and
Toshinori Takagi
Hiroaki Usui
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan
Kouji Numata
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan
Hitoshi Dohmoto
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan
Isao Yamada
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan
Toshinori Takagi
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan
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Abstract

Polyethylene thin films were deposited by the ionized cluster beam (ICB) method. The dielectric, resistivity, and breakdown field measurements showed that the ICB polyethylene films have excellent properties as an electrical insulator. The characteristics of Au/polyethylene/Si MIS diodes and MISFErs indicated that the ICB method can control the film-substrate interface property. The SIMS and ESCAan alyses showed that the ICB films have pure and stable chemical structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 108 , 1987 , 201
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1)Usui, H., Naemura, M., Yamada, I., and Takagi, T., Proc. 6th Symp. Ion Sources and Ion-Assisted Technol. (Inst. Elect. Rigs. Japan, Tokyo, 1982) p. 331.Google Scholar
2)Usui, H., Yamada, I., and Takagi, T., Proc. Int. Ion Eng. Cong. -ISIAT'83 & IPAT'83- (Inst. Elect. Engs. Japan, Tokyo, 1982) p. 1247.Google Scholar
3)Usui, H., Naemura, M., Nakanishi, H., Yamada, I., and Takagi, T., Proc. 8th Symp. Ion Sources and Ion-Assisted Technol. (Res. Group Ion Eng., Kyoto Univ., 1984) p. 271Google Scholar
4)Nakanishi, F., Takata, H., Usui, H., Yamada, I., and Takagi, T., Proc. 8th Symp. Ion Sources and Ion-Assisted Technol. (Res. Group Ion Eng., Kyoto Univ., 1985) p. 449.Google Scholar
5)Usui, H., Yamada, L, and Takagi, T., J. Vac. Soc. Technol. A4, 52 (1986).Google Scholar
6)Takagi, T., Yamada, I., Kunori, M., and Kobiyama, S., Proc. 2nd Int. Conf. Ion Sources, 1972, Vienna (Österreichische Studiengesellshaft fdr Atomenergie, Vienna, 1972) p. 790.Google Scholar
7)Takagi, T., Mat. Res. Soc. Symp. Proc. 27, 501 (1984).Google Scholar
8)Usui, H., Yamada, I., and Takagi, T., Proc. Int. Workshop Ionized Cluster Beam Technique (Res. Group Ion Eng., Kyoto Univ., 1986) p. 63.Google Scholar
9)Dohmoto, H., Nakanishi, F., Usui, H., Yamada, L, and Takagi, T., Proc. Int. Workshop Ionized Cluster Beam Technique (Res. Group Ion Eng., Kyoto Univ., 1986), p. 171.Google Scholar
10)Takagi, T., J. Vac. Sci. Technol. A2, 382 (1984).Google Scholar
11)Buzzer, P.D., Soung, D.S., Bell, A.T., J. Appl. Poly. Sci. 27, 3965 (1982).Google Scholar