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Characteristics of Polycrystalline Silicon thin Films Prepared by Pulsed Ion-Beam Evaporation

Published online by Cambridge University Press:  17 March 2011

Sung-Chae Yang ,
Ali Fazlat ,
Hisayuki Suematsu ,
Weihua Jiang  and
Kiyoshi Yatsui
Sung-Chae Yang
Affiliation:
Extreme Energy-Density Research Institute, Nagaoka University of Technology 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
Ali Fazlat
Affiliation:
Extreme Energy-Density Research Institute, Nagaoka University of Technology 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
Hisayuki Suematsu
Affiliation:
Extreme Energy-Density Research Institute, Nagaoka University of Technology 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
Weihua Jiang
Affiliation:
Extreme Energy-Density Research Institute, Nagaoka University of Technology 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
Kiyoshi Yatsui
Affiliation:
Extreme Energy-Density Research Institute, Nagaoka University of Technology 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Abstract

Using intense pulsed ion-beam evaporation technique, we have succeeded in the preparation of polycrystalline silicon thin films on silicon substrate without impurities. Good crystallinity and high deposition rate have been achieved without heating the substrate. The crystallinity of poly-Si film has been improved with increasing the density of the ablation plasma. The intense diffraction peaks of poly-Si thin films can be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films are increased by negative bias voltage for the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 697: Symposium P – Surface Engineering 2001--Fundamentals and Applications , January 2001 , P5.15
Copyright
Copyright © Materials Research Society 2002

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