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Characteristics of Metal/P+-Gaas Schottky Barrier Junction Formed by Focused-Ion-Beam Implantation

Published online by Cambridge University Press:  25 February 2011

N. Watanabe ,
T. Tsukamoto  and
M. Okunuki
N. Watanabe
Affiliation:
Canon Inc. Research Center 5-1, Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
T. Tsukamoto
Affiliation:
Canon Inc. Research Center 5-1, Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
M. Okunuki
Affiliation:
Canon Inc. Research Center 5-1, Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
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Abstract

Beryllium (Be) depth profiles, carrier profiles, ideality factors (deviation from thermionic emission and diffusion theory) and Schottky barrier heights of Al/p+-GaAs Schottky diodes were investigated by using focused ion beam (FIB) and de-focused ion beam (DFIB) of 40keV Be+, with dose range from 5.0×1012ions/cm2 to 3.4×1014ions/cm2. Differences of the depth profiles between FIB implantation and DFIB implantation were observed, and it was confirmed that depth profiles of the ion implantations were affected by current densities of the ion probes. The other side, it was recognized that the ideality factors and the Schottky barrier heights of the Schottky diodes were depended on effect of thermionic field emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 703
Copyright
Copyright © Materials Research Society 1990

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References

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