Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-26T12:18:29.731Z Has data issue: false hasContentIssue false
  • English
  • Français

Characteristics of Excimer-Laser-Crystallized Polysilicon Films by Line Beam Scanning Method

Published online by Cambridge University Press:  21 February 2011

Young Min Jhon ,
Dong Hwan Kim ,
Hong Chu ,
Chang Woo Lee  and
Sang Sam Choi
Young Min Jhon
Affiliation:
Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650, Korea
Dong Hwan Kim
Affiliation:
Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650, Korea
Hong Chu
Affiliation:
Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650, Korea
Chang Woo Lee
Affiliation:
Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650, Korea
Sang Sam Choi
Affiliation:
Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650, Korea
Get access

Abstract

Characteristics of polysilicon films, crystallized by excimer laser annealing, have been investigated. The entire amorphous silicon film of 50 mm X 50 mm has been crystallized by scanning a line shape excimer laser beam, which basically reduces the nonuniformity in the beam overlap region of the 2-dimensional scanning method. The laser beam had a Gaussian profile in the scanning direction, which ensured good crystallization by the reversible transitions between the crystalline and amorphous states and was expected to give step annealing effect The laser energy density and substrate temperature were varied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 647
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Oana, Y., Kotake, H., Mukai, N., and Ide, K., Jpn.J. Appl. Phys. 22–1, 493 (1982).Google Scholar
2 Matsui, M., Owada, J., Shiraki, Y., Maruyama, E., and Kawakami, H., Jpn.J. Appl. Phys. 22–1, 497 (1982).Google Scholar
3 Sameshima, T., Usui, S., and Sekiya, M., IEEE Electron Device Lett. EDL-7, 276 (1986)Google Scholar
4 Sameshima, T., Hara, M., and Usui, S., Jpn.J. Appl. Phys. 28, 1789 (1989).Google Scholar
5 Shimizu, K., Sugiura, O., and Matsmura, M., IEEE Trans. Electron Devices ED-40, 112 (1993).Google Scholar
6 Brotherton, S.D., McCulloch, D.J., Clegg, J.B., and Gowers, J.P., IEEE Trans. Electron Devices ED-40, 407 (1993).Google Scholar
7 Sera, K., Okumura, F., Uchida, H., Itoh, S., Kaneko, S., and Hotta, K., IEEE Trans. Electron Devices ED-36, 2868 (1989).Google Scholar
8 Shimizu, K., Sugiura, O., and Matsmura, M., Jpn.J. Appl. Phys. 29, L1775 (1990).Google Scholar
9 Hashizume, T., Inoue, S., Inami, T., Nakazawa, T., and Yudasaka, I., Ext. Abstr. Int. Conf Solid State Devices and Materials, Yokohama (Business Center for Academic Societies Japan, Tokyo, 1991) p. 638.Google Scholar
10 Asai, I., Kato, N., Fuse, M., and Hamano, H., Ext Abstr. 1992 Int. Conf Solid State Devices and Materials, Yokohama (Business Center for Academic Societies Japan, Tokyo, 1991) p. 620.Google Scholar
11 Asai, I., Kato, N., Fuse, M., and Hamano, T., Jpn.J. Appl. Phys. 32, 474 (1993).Google Scholar
12 Jhon, Y.M., Kim, D.H., Chu, H., and Choi, S.S., Jpn.J. Appl. Phys 33, L1438 (1994).Google Scholar
13 Sameshima, T. and Usui, S., J. Appl. Phys. 70, 1281 (1991).Google Scholar
14 Sameshima, T., Hara, M., and Usui, S., Jpn.J. Appl. Phys. 29, L548 (1990).Google Scholar
15 Kuriyama, H., Kiyama, S., Noguchi, S., Kuwahara, T., Ishida, S., Nohda, T., Sano, K., Iwata, H., Kawata, H., Osumi, M., Tsuda, S., Nakano, S., and Kuwano, Y., Jpn.J. Appl. Phys. 30, 3700 (1991).Google Scholar
16 Lee, C.W., Lee, C., and Kim, Y.T., Appl. Phys. A 56, 123 (1993).Google Scholar
17 Spear, W.E., Allan, D., LeComber, P., and Gaith, A., J. Non-Cryst Solids 35 & 36, 357 (1980).Google Scholar
18 Iqbal, Z. and Veprek, S., J. Phys. C 15, 377 (1982).Google Scholar
19 Phillip, H.R. and Taft, E.A., Phys. Rev. 120, 37 (1960).Google Scholar
20 Chelikowsky, J.R. and Cohen, M.L., Phys. Rev. B 10, 5095 (1974).Google Scholar