The strategy of adding alloying elements during the chemical vapor deposition (CVD) of copper to improve the reliability of copper films was investigated. Deposition of Cu-Pd alloy films was demonstrated using low-pressure CVD with (hexafluoroacetylacetonato)- copper(I)(vinyltrimethylsilane) [(hfac)Cu(I)vtms] and palladium(II)bis(hexafluoroacetyl- acetonate) [Pd(hfac)2] in the temperature range of 100-200 ° C in a cold-wall differential reactor. High growth rates of 100-500 nm/min and high-purity films as confirmed by Auger electron spectroscopy (AES) were obtained. As-deposited alloy films showed low resistivities (˜ 2.3 μΩcm) at palladium concentrations below 3 wt. %. A high degree of conformality was observed on sub-half-micron trenches with aspect ratios greater than 3.5:1. The co-deposition of copper and palladium resulted in significant inhibition of palladium growth as compared to the independent palladium deposition.