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Channeling Study of Partially Ionized Beam Deposited Epitaxial Ag Films on Si(111) Substrates

Published online by Cambridge University Press:  26 February 2011

H.-S. Jin ,
L. You  and
T.-M. Lu
H.-S. Jin
Affiliation:
Department of Physics, Brooklyn College of The City University of New York, Brooklyn, New York, 11210.
L. You
Affiliation:
The Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12181.
T.-M. Lu
Affiliation:
The Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12181.
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Abstract

Ag films deposited on Si(111) substrates by partially ionized beam (PIB) under conventional vacuum conditions were studied by MeV ion channeling techniques. In spite of their large lattice mismatch (24.8%), Ag films were still found to be epitaxial. With a deposition temperature of 350°C and without post-annealing, the Xmin value at the surface of a 2550 A° thick Ag film was found to be 10%. The azimuthal angular scan and the measured axial channeling dip showed that the Ag film was (111) oriented. The lattice quality of the films was comaparable to that deposited by MBE techniques. Dislocations were found in the PIB deposited Ag films. Lattice damage due to the bombardment of energetic ions was also observed. The thickness of the Ag film was found to have a pronounced effect on the crystalline quality at the surface. With the thickness increasing from 1240 A° to 2550 A°, the lattice quality at the Ag surface improved significantly, but not much change in the defect density in the Ag films was obseved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 69
Copyright
Copyright © Materials Research Society 1991

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