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Change of Arsenic Coverage on GaAs(001)

Published online by Cambridge University Press:  15 February 2011

Holger Nörenberg  and
Nobuyuki Koguchi
Holger Nörenberg
Affiliation:
On leave from: Fachbereich Physik, Universität Rostock, D-O-2500 Rostock, Germany
Nobuyuki Koguchi
Affiliation:
National Research Institute for Metals, Tsukuba Laboratories, 1-2-1 Sengen, Tsukuba-shi, Tbaraki 305, Japan
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Abstract

(2×4) and c(4×4) reconstructed GaAs(001) surfaces prepared by Molecular Beam Epitaxy (MBE) were studied by Reflection High Energy Electron Diffraction (RHEED). A method for accurate determination of the Arsenic coverage of reconstructed GaAs(001) surfaces is introduced. The time of Gallium supply to the reconstructed surface until a halo appears in the RHEED pattern is taken as measure for the Arsenic coverage. Structures between them were investigated at a substrate temperature of 200°C. The RHEED results were verified by High Resolution Scanning Electron Microscopy (HRSEM). Dependent on the surface reconstruction, Arsenic coverages between 0.76 and 1.22 monolayer (ML) were observed. Surface structures, observed during transformation between β(2×4) and c(4×4) will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 159
Copyright
Copyright © Materials Research Society 1993

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References

[1] DMweritz, L. and Hey, R., Surf. Sci. 236 (1990) 15.CrossRefGoogle Scholar
[2] Koguchi, N. and Ishige, K., to be published in Jpn. Journ. Appl. Phys..Google Scholar
[3] Horikoshi, Y., Kawashima, M. and Yamaguchi, H., Jpn. Journ. Appl. Phys. 27 (1988) 169.Google Scholar
[4] Zhang, J., Neave, J. H., Joyce, B. A., Taylor, A. G., Armstrong, S. R. and Pemble, M. E., Applied Surf. Sci. 60/61 (1992) 215.Google Scholar
[5] Zinke-Allmang, M., Feldman, L. C. and Grabow, M. H., Surf. Sci. Rep. 16 (1992) 377.Google Scholar
[6] Biegelsen, D. K., Bringans, R. D., Northrup, J. E. and Swartz, L. -E., Phys. Rev. B 41 (1990) 5701.Google Scholar
[7] Gallagher, M. C., Prince, R. H. and Willis, R. F., Surf. Sci. 275 (1992) 31.CrossRefGoogle Scholar
[8] Kanisawa, K., Osaka, J., Hirono, S. and Inoue, N., J. Cryst. Growth 115 (1991) 348.Google Scholar
[9] Aspnes, D. E., Harbison, J. P., Studna, A. A. and Florez, L. T., Phys. Rev. Lett. 59 (1987) 1687.Google Scholar
[10] Int. Tables for X-ray Cryst. Vol. III, Kynoch Press Birmingham 1968, p. 157.Google Scholar
[11] Farrell, H. H. and Palmstrom, C. J., J. Vac. Sci. & Technol. B 8 (1990) 903.Google Scholar
[12] Sasaoka, C., Kato, Y. and Usui, A., Surf. Sci. 265 (1992) L239.CrossRefGoogle Scholar