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Challenges in Etching of OSG Low- K Materials for Dual-Damascene Metallization

Published online by Cambridge University Press:  01 February 2011

Vladimir N. Bliznetsov ,
Moitreyee Mukherjee-Roy ,
Leong Yew Wing ,
Ng Beng Teck  and
Yew Wee Chuan
Vladimir N. Bliznetsov
Affiliation:
Institute of Microelectronics, Singapore.
Moitreyee Mukherjee-Roy
Affiliation:
Institute of Microelectronics, Singapore.
Leong Yew Wing
Affiliation:
Institute of Microelectronics, Singapore.
Ng Beng Teck
Affiliation:
National University of Singapore.
Yew Wee Chuan
Affiliation:
Institute of Microelectronics, Singapore.
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Abstract

Issues associated with trench etching in low-k OSG (organosilicate glass) films for dual damascene applications and in particular for “via-first” integration scheme were the focus of this study. As a result of designed experiment in dipole ring magnet (DRM) etcher with C4F8/N2/Ar gas mixture the trench process was established with sidewall profile 89° and flat bottom. Selectivity obtained was enough to pursue etch processes using planarizing BARC (bottom antireflective coating) for additional via bottom protection. BARC fill in vias and BARC opening time were tuned to reduce generation of polymers during etch. Effective combination of dry /wet clean recipes was developed for removal of post-RIE (reactive ion etching) residues without significant changes in OSG k-value. Optimized processes were successfully used for creating dual damascene structure complying with integration requirements for 0.13 μm design rules.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B7.13
Copyright
Copyright © Materials Research Society 2002

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References

1. Tan, C H., Mukherjee-Roy, M., Jo, W. M, Kumar, R., Foo, P. D., Sathappan, Santanesh s/o, Ngooi, S W., “Organic BARC Process Evaluation for Via First Dual Damascene Patterning”, Proceedings of SPIE, v.4345, 2001,p.804–815.Google Scholar
2. Huang, J., Yang, M., “Investigation on CH2F2 Chemistry for Self–Aligned Contact Etch” Electrochemical Society Proceedings v.99-30, p. 246–250.Google Scholar
3. Li, A., Tietz, J., Zhu, H., Helmer, B., Pirkle, D., Annapragada, R., Chien, Ting, and Sadjadi, R., “New Challenges in Plasma Etching For Low-K Dual Damascene”, Proceedings of the 1st International conference on Semiconductor Technology, edited by Yang, M., The Electrochem. Soc. Proc. V. 2001-17, 2001, p.531–538.Google Scholar
4. Keil, D., Helmer, B.A., Mueller, G., Wagganer, E., “Profile Control of Oxide Trench Features for Dual Damascene Applications”, Electrochemical Society Proceedings, v.99-30, p.284–294.Google Scholar